A new method of nitrogen doping into GaAs1-xPx was attempted using the ionized beam in molecular beam epitaxy (MBE). With the ionization system attached to MBE system, the ionized nitrogen beam was supplied onto the substrate during MBE. Nitrogen doping of more than 1018 cm-3 was successfully made without disturbing the high crystallographic quality of the epitaxial layer. Photoluminescence measurements show that the nitrogen atoms introduced into the epitaxial layer act as isoelectronic luminescence centers. The effective sticking coefficient of ionized nitrogen for GaAs1-xPx at 580°C is estimated as the order of 0.01.
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