Nitrogen doping into GaAs1-xPx using ionized beam in molecular beam epitaxy

Yuichi Matsushima, Shun ichi Gonda, Yunosuke Makita, Seiji Mukai

研究成果: Article査読

5 被引用数 (Scopus)

抄録

A new method of nitrogen doping into GaAs1-xPx was attempted using the ionized beam in molecular beam epitaxy (MBE). With the ionization system attached to MBE system, the ionized nitrogen beam was supplied onto the substrate during MBE. Nitrogen doping of more than 1018 cm-3 was successfully made without disturbing the high crystallographic quality of the epitaxial layer. Photoluminescence measurements show that the nitrogen atoms introduced into the epitaxial layer act as isoelectronic luminescence centers. The effective sticking coefficient of ionized nitrogen for GaAs1-xPx at 580°C is estimated as the order of 0.01.

本文言語English
ページ(範囲)281-286
ページ数6
ジャーナルJournal of Crystal Growth
43
3
DOI
出版ステータスPublished - 1978
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学

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