Nitrogen doping of 4H-SiC by the top-seeded solution growth technique using Si-Ti solvent

Kazuhiko Kusunoki, Kazuhito Kamei, Kazuaki Seki, Shunta Harada, Toru Ujihara

研究成果: Article査読

24 被引用数 (Scopus)

抄録

The nitrogen doping behavior of 4H-SiC was investigated by the top-seeded solution growth technique using Si-Ti solvent. Growth experiments were performed under a mixed gas of helium and nitrogen at atmospheric pressure at 1940°C, in which nitrogen content ranged between 0.17 and 0.5 vol%. The electrical property and structural quality of nitrogen-doped crystals were examined. The nitrogen doping level increased with the increase of nitrogen content in the growth furnace. The most heavily nitrogen-doped SiC with a concentration of 1.1×1020 cm-3 was obtained; however, stacking faults (SFs) were abruptly generated above a nitrogen concentration of 3.0×1019 cm-3. The lowest resistivity of approximately 0.010 Ω cm was obtained with SFs-free. Based on the both undoped and nitrogen-doped growth experimental results, the nitrogen incorporation behavior by employing our solution growth technique was discussed.

本文言語English
ページ(範囲)60-65
ページ数6
ジャーナルJournal of Crystal Growth
392
DOI
出版ステータスPublished - 2014 4 15
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 材料化学
  • 無機化学

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