Two methods were examined for doping nitrogen into ZnSe and ZnCdSe. N2 gas was thermally excited in the first method. The photoluminescence (PL) spectra showed that acceptor levels were formed in the film; this feature was similar to that observed in the samples doped with nonexcited N2 gas. The second method utilized pho-toexcited N2O and N2 gases using vacuum ultraviolet (VUV) light. A deuterium lamp was used for the VUV-light source. Deep-emission-dominant PL spectra were observed when films were doped using photoexcited N2O gas. N2O gas was then mixed with N2 gas to control the photodecomposition process and improve the film quality. Samples doped using the mixed gas exhibited well-resolved near-band-edge features. The PL spectrum of the ZnO.9 Cdo.iSe sample doped using the photoexcited mixed gas showed donor-acceptor pair emission.
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