Nitrogen doping of ZnSe and ZnCdSe with the assistance of thermal energy and photon energy

Shigeyuki Matsumoto, Hiroyuki Tosaka, Takashi Yoshida, Masakazu Kobayashi, Akihiko Yoshikawa

研究成果: Article

2 引用 (Scopus)

抄録

Two methods were examined for doping nitrogen into ZnSe and ZnCdSe. N2 gas was thermally excited in the first method. The photoluminescence (PL) spectra showed that acceptor levels were formed in the film; this feature was similar to that observed in the samples doped with nonexcited N2 gas. The second method utilized photoexcited N2O and N2 gases using vacuum ultraviolet (VUV) light. A deuterium lamp was used for the VUV-light source. Deep-emission-dominant PL spectra were observed when films were doped using photoexcited N2O gas. N2O gas was then mixed with N2 gas to control the photodecomposition process and improve the film quality. Samples doped using the mixed gas exhibited well-resolved near-band-edge features. The PL spectrum of the Zn0.9 Cd0.1 Se sample doped using the photoexcited mixed gas showed donor-acceptor pair emission.

元の言語English
ページ(範囲)731-735
ページ数5
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
32
発行部数2
出版物ステータスPublished - 1993 2
外部発表Yes

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Thermal energy
thermal energy
Photons
Doping (additives)
Nitrogen
nitrogen
photons
Gases
gases
Photoluminescence
energy
photoluminescence
ultraviolet radiation
Vacuum
photodecomposition
vacuum
Deuterium
Electric lamps
luminaires
Light sources

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

これを引用

Nitrogen doping of ZnSe and ZnCdSe with the assistance of thermal energy and photon energy. / Matsumoto, Shigeyuki; Tosaka, Hiroyuki; Yoshida, Takashi; Kobayashi, Masakazu; Yoshikawa, Akihiko.

:: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 巻 32, 番号 2, 02.1993, p. 731-735.

研究成果: Article

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