Nitrogen ion implantation into ZrN thin films

Naoto Kobayashi*, H. Tanoue

*この研究の対応する著者

研究成果: Article査読

5 被引用数 (Scopus)

抄録

Stoichiometric thin films of ZrN were implanted homogeneously in depth with N ions with multiple-energies at room temperature (RT) and at 380° C (HT) up to the concentration corresponding to x = 0.33 in ZrNi1 + x. Structural properties, electrical resistivities and superconductivity were investigated with progressive implantations. X-ray diffraction experiments have revealed the preservation of the B1 structure throughout the whole implantation processes. Variation of the lattice parameter a0 which is characteristic of B1 compounds at low implantation fluences and subsequent lattice expansion at high implantation fluences were observed with RT implantations, whereas a0 showed gradual decreases at high fluences with HT implantations. Electrical resistivities increased with implantation fluences in both RT and HT implantations and showed poor conducting properties. The superconducting transition temperature Tc decreased below 1.3 K for RT implantation, while it remains at 33% of the initial value for HT implantations at the concentration with x = 0.33.

本文言語English
ページ(範囲)746-749
ページ数4
ジャーナルNuclear Inst. and Methods in Physics Research, B
39
1-4
DOI
出版ステータスPublished - 1989 3月 2
外部発表はい

ASJC Scopus subject areas

  • 表面、皮膜および薄膜
  • 器械工学
  • 表面および界面

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