Stoichiometric thin films of ZrN were implanted homogeneously in depth with N ions with multiple-energies at room temperature (RT) and at 380° C (HT) up to the concentration corresponding to x = 0.33 in ZrNi1 + x. Structural properties, electrical resistivities and superconductivity were investigated with progressive implantations. X-ray diffraction experiments have revealed the preservation of the B1 structure throughout the whole implantation processes. Variation of the lattice parameter a0 which is characteristic of B1 compounds at low implantation fluences and subsequent lattice expansion at high implantation fluences were observed with RT implantations, whereas a0 showed gradual decreases at high fluences with HT implantations. Electrical resistivities increased with implantation fluences in both RT and HT implantations and showed poor conducting properties. The superconducting transition temperature Tc decreased below 1.3 K for RT implantation, while it remains at 33% of the initial value for HT implantations at the concentration with x = 0.33.
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