Nitrogen-ion-irnplantation synthesis of wurtzite GaN in GaP

K. Kuriyama, H. Kondo, N. Hayashi, M. Ogura, M. Hasegawa, Naoto Kobayashi, Yukimi Takahashi, S. Watanabe

研究成果: Article

10 引用 (Scopus)

抄録

α-GaN phase (wurtzite) was synthesized in GaP(100) by 140-keV N+ 2 ion implantation with a dose of 3.0 × 1017 cm-2 at 400°C and subsequent furnace annealing at 950°C for 20 min or rapid thermal annealing at 1000°C for 15 s. The traces of α-GaN were recognized by glancing-angle x-ray diffraction, supporting by the observation of the planes belonging to the [0100]-zone axis in α-GaN by a selected-area electron diffraction analysis. The formation of microcrystalline GaN of <1000 Å in size was confirmed by using Auger electron spectroscopy and cross sectional transmission electron microscopy. A 1 transverse optical phonon mode in α-GaN was observed at around 525 cm-1, indicating a nearly orientation relationship with GaN〈1120〉//GaP〈100〉.

元の言語English
ページ（範囲）2546-2548
ページ数3
ジャーナルApplied Physics Letters
巻79
発行部数16
DOI
出版物ステータスPublished - 2001 10 15
外部発表Yes

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nitrogen ions
wurtzite
annealing
synthesis
Auger spectroscopy
furnaces
electron spectroscopy
ion implantation
x ray diffraction
electron diffraction
dosage
transmission electron microscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

これを引用

Kuriyama, K., Kondo, H., Hayashi, N., Ogura, M., Hasegawa, M., Kobayashi, N., ... Watanabe, S. (2001). Nitrogen-ion-irnplantation synthesis of wurtzite GaN in GaP. Applied Physics Letters, 79(16), 2546-2548. https://doi.org/10.1063/1.1410341

Nitrogen-ion-irnplantation synthesis of wurtzite GaN in GaP. / Kuriyama, K.; Kondo, H.; Hayashi, N.; Ogura, M.; Hasegawa, M.; Kobayashi, Naoto; Takahashi, Yukimi; Watanabe, S.

：: Applied Physics Letters, 巻 79, 番号 16, 15.10.2001, p. 2546-2548.

研究成果: Article

Kuriyama, K, Kondo, H, Hayashi, N, Ogura, M, Hasegawa, M, Kobayashi, N, Takahashi, Y & Watanabe, S 2001, 'Nitrogen-ion-irnplantation synthesis of wurtzite GaN in GaP', Applied Physics Letters, 巻. 79, 番号 16, pp. 2546-2548. https://doi.org/10.1063/1.1410341
Kuriyama K, Kondo H, Hayashi N, Ogura M, Hasegawa M, Kobayashi N その他. Nitrogen-ion-irnplantation synthesis of wurtzite GaN in GaP. Applied Physics Letters. 2001 10 15;79(16):2546-2548. https://doi.org/10.1063/1.1410341
Kuriyama, K. ; Kondo, H. ; Hayashi, N. ; Ogura, M. ; Hasegawa, M. ; Kobayashi, Naoto ; Takahashi, Yukimi ; Watanabe, S. / Nitrogen-ion-irnplantation synthesis of wurtzite GaN in GaP. ：: Applied Physics Letters. 2001 ; 巻 79, 番号 16. pp. 2546-2548.
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abstract = "α-GaN phase (wurtzite) was synthesized in GaP(100) by 140-keV N+ 2 ion implantation with a dose of 3.0 × 1017 cm-2 at 400°C and subsequent furnace annealing at 950°C for 20 min or rapid thermal annealing at 1000°C for 15 s. The traces of α-GaN were recognized by glancing-angle x-ray diffraction, supporting by the observation of the planes belonging to the [0100]-zone axis in α-GaN by a selected-area electron diffraction analysis. The formation of microcrystalline GaN of <1000 {\AA} in size was confirmed by using Auger electron spectroscopy and cross sectional transmission electron microscopy. A 1 transverse optical phonon mode in α-GaN was observed at around 525 cm-1, indicating a nearly orientation relationship with GaN〈1120〉//GaP〈100〉.",
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AU - Kuriyama, K.

AU - Kondo, H.

AU - Hayashi, N.

AU - Ogura, M.

AU - Hasegawa, M.

AU - Kobayashi, Naoto

AU - Takahashi, Yukimi

AU - Watanabe, S.

PY - 2001/10/15

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N2 - α-GaN phase (wurtzite) was synthesized in GaP(100) by 140-keV N+ 2 ion implantation with a dose of 3.0 × 1017 cm-2 at 400°C and subsequent furnace annealing at 950°C for 20 min or rapid thermal annealing at 1000°C for 15 s. The traces of α-GaN were recognized by glancing-angle x-ray diffraction, supporting by the observation of the planes belonging to the [0100]-zone axis in α-GaN by a selected-area electron diffraction analysis. The formation of microcrystalline GaN of <1000 Å in size was confirmed by using Auger electron spectroscopy and cross sectional transmission electron microscopy. A 1 transverse optical phonon mode in α-GaN was observed at around 525 cm-1, indicating a nearly orientation relationship with GaN〈1120〉//GaP〈100〉.

AB - α-GaN phase (wurtzite) was synthesized in GaP(100) by 140-keV N+ 2 ion implantation with a dose of 3.0 × 1017 cm-2 at 400°C and subsequent furnace annealing at 950°C for 20 min or rapid thermal annealing at 1000°C for 15 s. The traces of α-GaN were recognized by glancing-angle x-ray diffraction, supporting by the observation of the planes belonging to the [0100]-zone axis in α-GaN by a selected-area electron diffraction analysis. The formation of microcrystalline GaN of <1000 Å in size was confirmed by using Auger electron spectroscopy and cross sectional transmission electron microscopy. A 1 transverse optical phonon mode in α-GaN was observed at around 525 cm-1, indicating a nearly orientation relationship with GaN〈1120〉//GaP〈100〉.

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