抄録
α-GaN phase (wurtzite) was synthesized in GaP(100) by 140-keV N+ 2 ion implantation with a dose of 3.0 × 1017 cm-2 at 400°C and subsequent furnace annealing at 950°C for 20 min or rapid thermal annealing at 1000°C for 15 s. The traces of α-GaN were recognized by glancing-angle x-ray diffraction, supporting by the observation of the planes belonging to the [0100]-zone axis in α-GaN by a selected-area electron diffraction analysis. The formation of microcrystalline GaN of <1000 Å in size was confirmed by using Auger electron spectroscopy and cross sectional transmission electron microscopy. A 1 transverse optical phonon mode in α-GaN was observed at around 525 cm-1, indicating a nearly orientation relationship with GaN〈1120〉//GaP〈100〉.
本文言語 | English |
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ページ(範囲) | 2546-2548 |
ページ数 | 3 |
ジャーナル | Applied Physics Letters |
巻 | 79 |
号 | 16 |
DOI | |
出版ステータス | Published - 2001 10月 15 |
外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学(その他)