Nitrogen-ion-irnplantation synthesis of wurtzite GaN in GaP

K. Kuriyama*, H. Kondo, N. Hayashi, M. Ogura, M. Hasegawa, Naoto Kobayashi, Yukimi Takahashi, S. Watanabe

*この研究の対応する著者

研究成果: Article査読

10 被引用数 (Scopus)

抄録

α-GaN phase (wurtzite) was synthesized in GaP(100) by 140-keV N+ 2 ion implantation with a dose of 3.0 × 1017 cm-2 at 400°C and subsequent furnace annealing at 950°C for 20 min or rapid thermal annealing at 1000°C for 15 s. The traces of α-GaN were recognized by glancing-angle x-ray diffraction, supporting by the observation of the planes belonging to the [0100]-zone axis in α-GaN by a selected-area electron diffraction analysis. The formation of microcrystalline GaN of <1000 Å in size was confirmed by using Auger electron spectroscopy and cross sectional transmission electron microscopy. A 1 transverse optical phonon mode in α-GaN was observed at around 525 cm-1, indicating a nearly orientation relationship with GaN〈1120〉//GaP〈100〉.

本文言語English
ページ(範囲)2546-2548
ページ数3
ジャーナルApplied Physics Letters
79
16
DOI
出版ステータスPublished - 2001 10月 15
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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