Nitrogen profile in SiOxNy prepared by thermal nitridation of ozone oxide

Kaoru Nakajima*, Kenji Kimura, Akira Kurokawa, Shingo Ichimura, Hisashi Fukuda

*この研究の対応する著者

研究成果: Article査読

1 被引用数 (Scopus)

抄録

Ultrathin silicon oxynitride films are prepared by ozone and thermal oxidation of Si(001) followed by rapid thermal nitridation. The nitrogen depth profiles in these films are measured by high-resolution Rutherford backscattering spectroscopy. The observed nitrogen profiles are essentially similar, having a peak at the SiO2/Si interface, although the interface strain in the ozone oxide is known to be much smaller than that of the thermal oxide. This indicates that the interface strain relaxation due to the nitrogen incorporation is not responsible for the nitrogen accumulation at the interface.

本文言語English
ページ(範囲)4011-4012
ページ数2
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
40
6 A
DOI
出版ステータスPublished - 2001 6
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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