No spin polarization of carriers in InGaN

A. Tackeuchi*, T. Kuroda, A. Shikanai, T. Sota, A. Kuramata, K. Domen

*この研究の対応する著者

研究成果: Conference article査読

18 被引用数 (Scopus)

抄録

We report the spin polarization of carriers photoexcited in bulk InGaN by circularly polarized femtosecond optical pulses. No spin polarization is observed in the picosecond time region using spin-dependent pump and probe absorption measurements with a time resolution of 0.35 ps. This is in contrast to the existence of spin polarization in GaAs quantum wells or in InGaAs quantum wells which have a spin relaxation time in the picosecond time region. The unique band structure of InGaN, which has weak spin-orbit interaction, and an in-plane potential fluctuation due to the compositional inhomogeneity of In explains the lack of spin polarization.

本文言語English
ページ(範囲)1011-1014
ページ数4
ジャーナルPhysica E: Low-Dimensional Systems and Nanostructures
7
3
DOI
出版ステータスPublished - 2000 5
イベントMSS9: The 9th International Conference on Modulated Semiconductor Structures - Fukuoka, Jpn
継続期間: 1999 7 121999 7 16

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 凝縮系物理学

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