Non-destructive Raman evaluation of a heavily doped surface layer fabricated by laser doping with B-doped Si nanoparticles

Miho Momose, Yukio Furukawa

研究成果: Review article査読

2 被引用数 (Scopus)

抄録

The heavy B-doping of an intrinsic Si(1 0 0) wafer has been performed by irradiating a B-doped Si nanoparticle film on the surface of the Si(1 0 0) substrate with energy densities of 8.0 and 16.0 J/cm2 by 532-nm laser light. The thicknesses of the heavily doped surface layers were investigated using Raman spectroscopy. The observed 488.0-nm-excited Raman bands were decomposed into two bands: a Fano-type band due to the heavily doped Si surface layer and a Voigt band due to the lightly doped, intrinsic Si region. The analysis of the Fano-type band indicated that the carrier concentration of the heavily doped region was larger than approximately 1019 cm-3. Based on the two-state model, the thicknesses of the heavily doped surface layers were 480 and 630 nm for the samples prepared with energy densities of 8.0 and 16.0 J/cm2, respectively. These values were consistent with those obtained by secondary ion mass spectroscopy (SIMS).

本文言語English
ページ(範囲)748-754
ページ数7
ジャーナルMaterials Science in Semiconductor Processing
39
DOI
出版ステータスPublished - 2015 7 10

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

フィンガープリント

「Non-destructive Raman evaluation of a heavily doped surface layer fabricated by laser doping with B-doped Si nanoparticles」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル