Nonequilibrium electronic and phonon dynamics of Cu0.17Bi2Se3 investigated by core-level and valence-band time-resolved photoemission spectroscopy

T. Yamamoto, Y. Ishida, R. Yoshida, M. Okawa, K. Okazaki, T. Kanai, A. Kikkawa, Y. Taguchi, T. Kiss, K. Ishizaka, N. Ishii, J. Itatani, S. Watanabe, Y. Tokura, T. Saitoh, S. Shin

研究成果: Article査読

2 被引用数 (Scopus)

抄録

We have performed time-resolved (TR) core-level and valence-band angle-resolved (AR) photoemission spectroscopy (PES) to investigate ultrafast dynamics of an electron-doped topological insulator Cu0.17Bi2Se3. The Bi 5d5/2 line was composed of a single peak and exhibited broadening upon both heating and pumping, which we interpreted as a change of phonon temperature (Tp), in the surface region. The electronic dynamics and electron temperature (Te), on the other hand, were determined with near-EF TRARPES. The transient temperature deduced from core-level TRPES shows a similar behavior with Te deduced from near-EF TRARPES. This similar behavior of Tp and Te can be reproduced not by a simple two-temperature model but by a modified one, although we cannot exclude a possibility that core-level broadening also reflects Te.

本文言語English
論文番号121106
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
92
12
DOI
出版ステータスPublished - 2015 9月 10
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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