Nonlinear optical dynamics in GaN and related materials

A. Shikanai, K. Hazu, T. Sota, K. Suzuki, Y. Kawakami, Sg Fujita

研究成果: Conference article査読

抄録

The carrier dynamics in InGaN layers and InGaN multiquantum-well (MQW) structures were studied by employing the degenerate pump and probe, time-resolved photoluminescence (PL), and white-light pump and probe measurements. The results from degenerate pump and probe measurements showed that the internal field existed in undoped InGaN but then was screened by the electrons supplied by the Si atoms in Si-doped InGaN. The rise time of PL in InGaN MQW obtained using the upconversion method was very fast, below ips, the mechanism of which is due to the carrier-carrier interaction enhanced by the residual electrons. The OD spectra in InGaN MQW observed in white-light pump and probe measurements indicated that the carrier temperature was substantially higher than the lattice temperature even at 4ops after pulsed photo-pumping. Keywords: quantum confined stark effect, internal field, pump and probe measurement, upconversion method.

本文言語English
ページ(範囲)209-216
ページ数8
ジャーナルProceedings of SPIE - The International Society for Optical Engineering
4992
DOI
出版ステータスPublished - 2003 5 30
イベントUltrafast Phenomena in Semiconductors VII 2003 - San Jose, United States
継続期間: 2003 1 252003 1 31

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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