Nonvolatile three-terminal operation based on oxygen vacancy drift in a Pt/Ta2O5-x/Pt, Pt structure

Qi Wang, Yaomi Itoh, Tsuyoshi Hasegawa, Tohru Tsuruoka, Shu Yamaguchi, Satoshi Watanabe, Toshiro Hiramoto, Masakazu Aono

研究成果: Article査読

8 被引用数 (Scopus)

抄録

Nonvolatile three-terminal operation is demonstrated using a Pt/Ta 2O5-x/Pt, Pt structure, by controlling oxygen vacancy drift to make/annihilate a conductive channel between a source and a drain. The as-fabricated device is in an off-state. Application of a positive gate bias moves oxygen vacancies in a Ta2O5-x layer towards a channel region, making the channel region conductive. The conductive channel remains even after unloading the gate bias. Application of a negative gate bias, which moves the oxygen vacancies back towards the gate electrode, is required to turn off the device. The device shows a high ON/OFF ratio of up to 10 6.

本文言語English
論文番号233508
ジャーナルApplied Physics Letters
102
23
DOI
出版ステータスPublished - 2013 6 10
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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