Normally-Off C-H Diamond MOSFETs with Partial C-O Channel Achieving 2-kV Breakdown Voltage

Yuya Kitabayashi, Takuya Kudo, Hidetoshi Tsuboi, Tetsuya Yamada, Dechen Xu, Masanobu Shibata, Daisuke Matsumura, Yuya Hayashi, Mohd Syamsul, Masafumi Inaba, Atsushi Hiraiwa, Hiroshi Kawarada

研究成果: Article

52 引用 (Scopus)

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Diamond has unique physical properties, which show great promise for applications in the next generation power devices. Hydrogen-terminated (C-H) diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) often have normally-on operation in devices, because the C-H channel features a p-type inversion layer; however, normally-off devices are preferable in power MOSFETs from the viewpoint of fail safety. We fabricated hydrogen-terminated (C-H) diamond MOSFETs using a partially oxidized (partial C-O) channel. The fabricated MOSFETs showed a high breakdown voltage of over 2 kV at room temperature and normally-off characteristics with a gate threshold voltage Vth of -2.5 - 4 V.

元の言語English
記事番号7837668
ページ(範囲)363-366
ページ数4
ジャーナルIEEE Electron Device Letters
38
発行部数3
DOI
出版物ステータスPublished - 2017 3

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Kitabayashi, Y., Kudo, T., Tsuboi, H., Yamada, T., Xu, D., Shibata, M., Matsumura, D., Hayashi, Y., Syamsul, M., Inaba, M., Hiraiwa, A., & Kawarada, H. (2017). Normally-Off C-H Diamond MOSFETs with Partial C-O Channel Achieving 2-kV Breakdown Voltage. IEEE Electron Device Letters, 38(3), 363-366. [7837668]. https://doi.org/10.1109/LED.2017.2661340