Novel characterization of implant damage in SiO2 by nuclear-deposited energy

A. Hiraiwa*, H. Usui, K. Yagi

*この研究の対応する著者

研究成果: Article査読

25 被引用数 (Scopus)

抄録

Etching enhancement in through-implanted SiO2 has been characterized by nuclear-deposited energy independently of implant conditions. An empirical expression has been proposed to describe the etching rate for any implantation. The enhanced etching has been related to the Si-O vibrational frequency shift. Etching enhancement has been found to reflect the structural change in SiO2, and to be a good measure of degradation. The structural change of SiO2 stops and the etching rate reaches a maximum for an ion dose corresponding to nuclear-deposited energy larger than 3.4×1023 eV/cm3. This energy is equal to the total SiO bonding energy (3.8 eV) in a unit volume of SiO2.

本文言語English
ページ(範囲)1106-1108
ページ数3
ジャーナルApplied Physics Letters
54
12
DOI
出版ステータスPublished - 1989
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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