抄録
A novel double well with buffer n- and gettering layers structure for strong suppression of SER (DOWNSER) is briefly presented in this paper. The mechanisms for reduction of SER have been investigated by experimental and simulation studies. The buffer n- and the gettering layer in DOWNSER structure play the important role in cutting off the minority carrier generated from the incident alpha particle in the p-type region or the reverse biased junction.
本文言語 | English |
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ページ(範囲) | 41-42 |
ページ数 | 2 |
ジャーナル | Digest of Technical Papers - Symposium on VLSI Technology |
出版ステータス | Published - 1994 12月 1 |
外部発表 | はい |
イベント | Proceedings of the 1994 Symposium on VLSI Technology - Honolulu, HI, USA 継続期間: 1994 6月 7 → 1994 6月 9 |
ASJC Scopus subject areas
- 電子工学および電気工学