A novel double well with buffer n- and gettering layers structure for strong suppression of SER (DOWNSER) is briefly presented in this paper. The mechanisms for reduction of SER have been investigated by experimental and simulation studies. The buffer n- and the gettering layer in DOWNSER structure play the important role in cutting off the minority carrier generated from the incident alpha particle in the p-type region or the reverse biased junction.
|ジャーナル||Digest of Technical Papers - Symposium on VLSI Technology|
|出版ステータス||Published - 1994 12 1|
|イベント||Proceedings of the 1994 Symposium on VLSI Technology - Honolulu, HI, USA|
継続期間: 1994 6 7 → 1994 6 9
ASJC Scopus subject areas
- Electrical and Electronic Engineering