Novel functional devices of transition metal dichalcogenide monolayers

Taishi Takenobu, Jiang Pu, Lain Jong Li, Yoshihiro Iwasa

    研究成果: Conference contribution

    抄録

    Recently, the transition metal dichalcogenide (TMDC) monolayers, such as MoS2, MoSe2 and WSe2, have attracted considerable interest because of its high carrier mobility, mechanical strength, large intrinsic bandgap and optical properties. Although many researches have been done by mechanically exfoliated TMDC monolayers, the chemical vapour deposition (CVD) growth of TMDC thin films that could be transferred onto other arbitrary substrates was reported, thereby providing a path forward to develop large-area CMOS electronics built onto flexible plastic and stretchable rubber substrates. Here, we firstly demonstrate the fabrication of CVD-growth MoS 2 thin-film transistors (TFTs) using ion gel as elastic gate dielectrics, opening a route for atomically thin electronics and optoelectronics on flexible and stretchable substrates.

    本文言語English
    ホスト出版物のタイトルProceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials
    出版社IEEE Computer Society
    ページ283-286
    ページ数4
    ISBN(印刷版)9784863483958
    DOI
    出版ステータスPublished - 2014
    イベント21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014 - Kyoto
    継続期間: 2014 7 22014 7 4

    Other

    Other21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014
    CityKyoto
    Period14/7/214/7/4

    ASJC Scopus subject areas

    • ハードウェアとアーキテクチャ
    • 電子工学および電気工学

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