Novel process for high-density buried nanopyramid array fabrication by means of dopant ion implantation and wet etching

Meishoku Koh, Tomomi Goto, Atsushi Sugita, Takashi Tanii, Tomoyuki Iida, Takahiro Shinada, Takashi Matsukawa, Iwao Ohdomari

    研究成果: Article

    16 引用 (Scopus)

    抄録

    A simple and high-throughput process to fabricate a high-density buried nanopyramid array (BNPA) on a Si surface has been developed by means of dopant ion implantation and wet etching. In this process, the combination of two interesting etching phenomena was utilized to form the BNPA. One is the enhanced etching of ion-exposed SiO2 in HF. The other is the newly found retarded etching of ion-exposed Si in hydrazine (N2H4). A p-type Si(100) substrate with 27-nm-thick SiO2 was exposed to 50-keV phosphorus ions with a dotted pattern. Then, the ion-exposed SiO2 was selectively etched away by dipping in HF. Finally, the BNPA was formed under the patterned SiO2 layer by dipping in hydrazine. By using this simple process, the BNPA with 250 nm pitch was successfully fabricated. The electrical property of the fabricated nanopyramid was also investigated using scanning Maxwell-stress microscopy (SMM).

    元の言語English
    ページ(範囲)2837-2839
    ページ数3
    ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    40
    発行部数4 B
    出版物ステータスPublished - 2001 4

    Fingerprint

    Wet etching
    Ion implantation
    ion implantation
    Doping (additives)
    etching
    Fabrication
    Etching
    fabrication
    Hydrazine
    Ions
    hydrazines
    dipping
    ions
    phosphorus
    Phosphorus
    Microscopic examination
    Electric properties
    electrical properties
    Throughput
    microscopy

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    これを引用

    Novel process for high-density buried nanopyramid array fabrication by means of dopant ion implantation and wet etching. / Koh, Meishoku; Goto, Tomomi; Sugita, Atsushi; Tanii, Takashi; Iida, Tomoyuki; Shinada, Takahiro; Matsukawa, Takashi; Ohdomari, Iwao.

    :: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 巻 40, 番号 4 B, 04.2001, p. 2837-2839.

    研究成果: Article

    Koh, Meishoku ; Goto, Tomomi ; Sugita, Atsushi ; Tanii, Takashi ; Iida, Tomoyuki ; Shinada, Takahiro ; Matsukawa, Takashi ; Ohdomari, Iwao. / Novel process for high-density buried nanopyramid array fabrication by means of dopant ion implantation and wet etching. :: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2001 ; 巻 40, 番号 4 B. pp. 2837-2839.
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    abstract = "A simple and high-throughput process to fabricate a high-density buried nanopyramid array (BNPA) on a Si surface has been developed by means of dopant ion implantation and wet etching. In this process, the combination of two interesting etching phenomena was utilized to form the BNPA. One is the enhanced etching of ion-exposed SiO2 in HF. The other is the newly found retarded etching of ion-exposed Si in hydrazine (N2H4). A p-type Si(100) substrate with 27-nm-thick SiO2 was exposed to 50-keV phosphorus ions with a dotted pattern. Then, the ion-exposed SiO2 was selectively etched away by dipping in HF. Finally, the BNPA was formed under the patterned SiO2 layer by dipping in hydrazine. By using this simple process, the BNPA with 250 nm pitch was successfully fabricated. The electrical property of the fabricated nanopyramid was also investigated using scanning Maxwell-stress microscopy (SMM).",
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    AU - Koh, Meishoku

    AU - Goto, Tomomi

    AU - Sugita, Atsushi

    AU - Tanii, Takashi

    AU - Iida, Tomoyuki

    AU - Shinada, Takahiro

    AU - Matsukawa, Takashi

    AU - Ohdomari, Iwao

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    N2 - A simple and high-throughput process to fabricate a high-density buried nanopyramid array (BNPA) on a Si surface has been developed by means of dopant ion implantation and wet etching. In this process, the combination of two interesting etching phenomena was utilized to form the BNPA. One is the enhanced etching of ion-exposed SiO2 in HF. The other is the newly found retarded etching of ion-exposed Si in hydrazine (N2H4). A p-type Si(100) substrate with 27-nm-thick SiO2 was exposed to 50-keV phosphorus ions with a dotted pattern. Then, the ion-exposed SiO2 was selectively etched away by dipping in HF. Finally, the BNPA was formed under the patterned SiO2 layer by dipping in hydrazine. By using this simple process, the BNPA with 250 nm pitch was successfully fabricated. The electrical property of the fabricated nanopyramid was also investigated using scanning Maxwell-stress microscopy (SMM).

    AB - A simple and high-throughput process to fabricate a high-density buried nanopyramid array (BNPA) on a Si surface has been developed by means of dopant ion implantation and wet etching. In this process, the combination of two interesting etching phenomena was utilized to form the BNPA. One is the enhanced etching of ion-exposed SiO2 in HF. The other is the newly found retarded etching of ion-exposed Si in hydrazine (N2H4). A p-type Si(100) substrate with 27-nm-thick SiO2 was exposed to 50-keV phosphorus ions with a dotted pattern. Then, the ion-exposed SiO2 was selectively etched away by dipping in HF. Finally, the BNPA was formed under the patterned SiO2 layer by dipping in hydrazine. By using this simple process, the BNPA with 250 nm pitch was successfully fabricated. The electrical property of the fabricated nanopyramid was also investigated using scanning Maxwell-stress microscopy (SMM).

    KW - Dopant ion implantation

    KW - Field emitter

    KW - HF

    KW - Hydrazine

    KW - Nanopyramid array

    KW - Si

    KW - SiO

    KW - Wet etching

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