Novel shallow trench isolation process from viewpoint of total strain process design for 45 nm node devices and beyond

Masato Ishibashi*, Katsuyuki Horita, Mahito Sawada, Masashi Kitazawa, Motoshige Igarashi, Takashi Kuroi, Takahisa Eimori, Kiyoteru Kobayashi, Masahide Inuishi, Yuzuru Ohji

*この研究の対応する著者

研究成果: Article査読

12 被引用数 (Scopus)

抄録

In this paper, a novel shallow trench isolation (STI) process is proposed for 45 nm node technologies and beyond. The major features of this process are the use of a fluorine-doped (F-doped) SiO2 film for gap filling and high-temperature rapid thermal oxidation (HT-RTO) for gate oxidation. Voidless filling of a narrow trench can be realized by F-doped high-density plasma chemical vapor deposition (F-doped HDP-CVD). Moreover, electron mobility degradation caused by STI stress and junction leakage currents can be minimized using F-doped HDP-CVD with HT-RTO. It was also confirmed that compressive stress in the F-doped HDP-CVD sample is smaller in every measurement point around STI than that in the conventional HDP-CVD sample by convergent-beam electron diffraction (CBED). The Si-F bonds in the oxide film play a very important role in stress reduction. By utilizing HT-RTO, Si-F bonds remain and make the SiO2 film in the trench coarse. This technique is a very promising 45 nm node STI scheme with high performance and high reliability.

本文言語English
ページ(範囲)2152-2156
ページ数5
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
44
4 B
DOI
出版ステータスPublished - 2005 4月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

フィンガープリント

「Novel shallow trench isolation process from viewpoint of total strain process design for 45 nm node devices and beyond」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル