Nucleation control and selective growth of diamond particles formed with plasma CVD

Jing Sheng^Ma, Hiroshi Kawarada, Takao Yonehara, Jun ichi Suzuki, Yoshihiro Yokota, Akio Hiraki

研究成果: Article査読

19 被引用数 (Scopus)

抄録

To obtain polycrystals with large and uniform grain size, diamond particles have been selectively formed on a SiO 2 dot-patterned Si substrate using plasma-assisted CVD. After pretreatment by abrasive powders to increase diamond nucleation densities on both Si and SiO2, an Ar beam is used to irradiate obliquely the pretreated surface. As a result, diamond can no longer nucleate on Si, it nucleates only on one edge of the SiO2 dots and grows over the Si substrate to about 10 #m. Well defined polycrystals having equal grain sizes have been obtained. The role of the Ar beam irradiation on Si and on SiO2 is also discussed.

本文言語English
ページ(範囲)1206-1210
ページ数5
ジャーナルJournal of Crystal Growth
99
1-4
DOI
出版ステータスPublished - 1990
外部発表はい

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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