Nucleation of tungsten by chemical vapor deposition from WF6 and SiH4

Y. Kajikawa, T. Tsumura, Suguru Noda, H. Komiyama, Y. Shimogaki

研究成果: Conference contribution

抄録

In this paper, we investigated the nucleation process of W from WF6 and SiH4by using a cold wall-type CVD reactor. W was then deposited from WF6(0.42vol%)SiHsub 4(0.42vol%) H2 (33vol%)Ar at 5 Torr. TiN substrates were heated up under Ar atmosphere and hold at 673 K for 20 min under 35 vol% H2Ar atmosphere at 5 Torr. The surface states was monitored in-situ by using field emission scanning electron microscopy (FESEM), micro Auger electron spectroscopy (AES), and X-ray photoelectron spectroscopy (XPS).

本文言語English
ホスト出版物のタイトルDigest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003
出版社Institute of Electrical and Electronics Engineers Inc.
ページ256-257
ページ数2
ISBN(電子版)4891140402, 9784891140403
DOI
出版ステータスPublished - 2003
外部発表はい
イベントInternational Microprocesses and Nanotechnology Conference, MNC 2003 - Tokyo, Japan
継続期間: 2003 10 292003 10 31

Other

OtherInternational Microprocesses and Nanotechnology Conference, MNC 2003
国/地域Japan
CityTokyo
Period03/10/2903/10/31

ASJC Scopus subject areas

  • ハードウェアとアーキテクチャ
  • 電子工学および電気工学

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