Nucleation of W during chemical vapor deposition from WF6 and SiH4

Yuya Kajikawa*, Takeshi Tsumura, Suguru Noda, Hiroshi Komiyama, Yukihiro Shimogaki

*この研究の対応する著者

研究成果: Article査読

18 被引用数 (Scopus)

抄録

A gas mixture of tungsten hexafluoride (WF6) and silane (SiH4) is generally used to form the initial layer of tungsten (W) on titanium nitride (TiN). However, the nucleation mechanism is still not clear, thus making it difficult to optimize such processes for complete filling of via holes. Therefore, in this study, we examined the nucleation process by laser-reflection measurements, scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS). These measurements indicate that W nucleation has two stages: monolayer formation followed by nucleation of three-dimensional (3D) islands. The monolayer formation can be expressed as Langmuir-type adsorption, and proceeds with the reduction of WF6 by Ti on TiN substrates. After monolayer formation, nucleation of 3D islands occurs and islands rapidly grow. These processes were quantitatively modeled using a simple rate equation. The results of our model agree well with our measurements of the deposited amount and coverage of islands.

本文言語English
ページ(範囲)3945-3950
ページ数6
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
43
6 B
DOI
出版ステータスPublished - 2004 6月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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