抄録
A gas mixture of tungsten hexafluoride (WF6) and silane (SiH4) is generally used to form the initial layer of tungsten (W) on titanium nitride (TiN). However, the nucleation mechanism is still not clear, thus making it difficult to optimize such processes for complete filling of via holes. Therefore, in this study, we examined the nucleation process by laser-reflection measurements, scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS). These measurements indicate that W nucleation has two stages: monolayer formation followed by nucleation of three-dimensional (3D) islands. The monolayer formation can be expressed as Langmuir-type adsorption, and proceeds with the reduction of WF6 by Ti on TiN substrates. After monolayer formation, nucleation of 3D islands occurs and islands rapidly grow. These processes were quantitatively modeled using a simple rate equation. The results of our model agree well with our measurements of the deposited amount and coverage of islands.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 3945-3950 |
| ページ数 | 6 |
| ジャーナル | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| 巻 | 43 |
| 発行部数 | 6 B |
| DOI | |
| 出版物ステータス | Published - 2004 6 |
| 外部発表 | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
これを引用
Nucleation of W during chemical vapor deposition from WF6 and SiH4 . / Kajikawa, Yuya; Tsumura, Takeshi; Noda, Suguru; Komiyama, Hiroshi; Shimogaki, Yukihiro.
：: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 巻 43, 番号 6 B, 06.2004, p. 3945-3950.研究成果: Article
}
TY - JOUR
T1 - Nucleation of W during chemical vapor deposition from WF6 and SiH4
AU - Kajikawa, Yuya
AU - Tsumura, Takeshi
AU - Noda, Suguru
AU - Komiyama, Hiroshi
AU - Shimogaki, Yukihiro
PY - 2004/6
Y1 - 2004/6
N2 - A gas mixture of tungsten hexafluoride (WF6) and silane (SiH4) is generally used to form the initial layer of tungsten (W) on titanium nitride (TiN). However, the nucleation mechanism is still not clear, thus making it difficult to optimize such processes for complete filling of via holes. Therefore, in this study, we examined the nucleation process by laser-reflection measurements, scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS). These measurements indicate that W nucleation has two stages: monolayer formation followed by nucleation of three-dimensional (3D) islands. The monolayer formation can be expressed as Langmuir-type adsorption, and proceeds with the reduction of WF6 by Ti on TiN substrates. After monolayer formation, nucleation of 3D islands occurs and islands rapidly grow. These processes were quantitatively modeled using a simple rate equation. The results of our model agree well with our measurements of the deposited amount and coverage of islands.
AB - A gas mixture of tungsten hexafluoride (WF6) and silane (SiH4) is generally used to form the initial layer of tungsten (W) on titanium nitride (TiN). However, the nucleation mechanism is still not clear, thus making it difficult to optimize such processes for complete filling of via holes. Therefore, in this study, we examined the nucleation process by laser-reflection measurements, scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS). These measurements indicate that W nucleation has two stages: monolayer formation followed by nucleation of three-dimensional (3D) islands. The monolayer formation can be expressed as Langmuir-type adsorption, and proceeds with the reduction of WF6 by Ti on TiN substrates. After monolayer formation, nucleation of 3D islands occurs and islands rapidly grow. These processes were quantitatively modeled using a simple rate equation. The results of our model agree well with our measurements of the deposited amount and coverage of islands.
KW - Chemical vapor deposition
KW - Modeling
KW - Nucleation and growth
KW - Silane
KW - Tungsten
KW - Tungsten hexafluoride
UR - http://www.scopus.com/inward/record.url?scp=4444316751&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=4444316751&partnerID=8YFLogxK
U2 - 10.1143/JJAP.43.3945
DO - 10.1143/JJAP.43.3945
M3 - Article
AN - SCOPUS:4444316751
VL - 43
SP - 3945
EP - 3950
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 6 B
ER -