Numerical analysis of polarization sensitivity in strained bulk semiconductor optical amplifiers

T. Kakitsuka*, Y. Shibata, M. Itoh, Y. Tohmori, Y. Yoshikuni

*この研究の対応する著者

研究成果: Paper査読

2 被引用数 (Scopus)

抄録

Polarization dependence in 1.55-μm SOAs based on tensile-strained bulk InGaAsP is analyzed numerically, focusing on strain relaxation in the active layer. We demonstrate that the strain introduced during the epitaxial growth of the active layer is reduced due to the InP-buried structure. The polarization dependence of the gain is calculated by using the k·p method, taking strain relaxation into account and compared with experimental results. The change of strain has non-negligible effects that have to be considered in choosing of the strain for polarization independence of the gain.

本文言語English
ページ485-488
ページ数4
出版ステータスPublished - 2001 1 1
外部発表はい
イベント2001 International Conference on Indium Phosphide and Related Materials - Nara, Japan
継続期間: 2001 5 142001 5 18

Conference

Conference2001 International Conference on Indium Phosphide and Related Materials
国/地域Japan
CityNara
Period01/5/1401/5/18

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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