Numerical analysis of transition energy shift in InAs/GaAs quantum dots induced by strain-reducing layers

T. Kakitsuka*, T. Saito, T. Nakaoka, Y. Arakawa, H. Ebe, M. Sugawara, Y. Yoshikuni

*この研究の対応する著者

研究成果査読

8 被引用数 (Scopus)

抄録

The electronic structure of pyramid-like InAs/GaAs quantum dots (QDs) covered with an InGaAs strain-reducing layer is analyzed numerically, focusing on the dependence of the transition energy on the strain-reducing layer thickness. The transition energy of the QD is calculated by the effective mass approximation, taking into account the change of the strain distribution induced by the strain-reducing layer. A large transition energy redshift of more than 60 meV caused by the strain reduction in the QD is obtained, as the strain reducing layer thickness increases. Furthermore, it is found that when strain-reducing layer thickness becomes large, the transition energy redshift saturates. The calculation explains the reported experimental results correctly, which indicates that the strain reducing layer enables control of operation-wavelength over a wide range in various optical devices.

本文言語English
ページ(範囲)1157-1160
ページ数4
ジャーナルPhysica Status Solidi C: Conferences
4
DOI
出版ステータスPublished - 2003
外部発表はい
イベント2nd International Conference on Semiconductor Quantum Dots, QD 2002 - Tokyo, Japan
継続期間: 2002 9 302002 10 3

ASJC Scopus subject areas

  • 凝縮系物理学

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