O-band InAs/InGaAs quantum dot laser diode with sandwiched sub-nano separator (SSNS) structures

Naokatsu Yamamoto, Hiroki Fujioka, Kouichi Akahane, Redouane Katouf, Tetsuya Kawanishi, Hiroshi Takai, Hideyuki Sotobayashi

研究成果: Conference contribution

2 引用 (Scopus)

抜粋

O-band InAs/InGaAs quantum-dot (QD) laser-diode has been successfully demonstrated by using sandwiched sub-nano separator (SSNS) structures on GaAs. Improvement of crystal-qualities and enhancement of luminescence intensities were attained for the QD laser by SSNS technique.

元の言語English
ホスト出版物のタイトル2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
出版物ステータスPublished - 2009 11 16
外部発表Yes
イベント2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 - Baltimore, MD, United States
継続期間: 2009 6 22009 6 4

出版物シリーズ

名前2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009

Other

Other2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
United States
Baltimore, MD
期間09/6/209/6/4

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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  • これを引用

    Yamamoto, N., Fujioka, H., Akahane, K., Katouf, R., Kawanishi, T., Takai, H., & Sotobayashi, H. (2009). O-band InAs/InGaAs quantum dot laser diode with sandwiched sub-nano separator (SSNS) structures. : 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 [5226125] (2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009).