A new in-situ optical probing method for studying surface reactions during heteroepitaxial growth is proposed. The new method is named surface photo-interference (SPI), because the concept of the SPI is essentially concerned with a photo-interference in the heteroepilayer. The experimental setup of the method is very similar to another optical probing method called surface photo-absorption (SPA), but the principle is quite different between the two. Unlike SPA, fairly low energy photons that are transparent for the epilayer can also be used in SPI as a probing light. Reflecting this feature, SPI is especially useful for studying growth kinetics in heteroepitaxial growth of widegap II-VI compounds, because the effect of photocatalytic growth-rate enhancement can be avoided when using such low energy photons as a probing light. A brief theoretical description of SPI signal is given, and experimental results detected in metalorganic molecular beam energy (MOMBE) of ZnSe and CdSe are mainly discussed. Further, how SPI differs from SPA will be shown.
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