Observation of a Si surface sputtered by an ion irradiation system using a prototype compact cluster ion source

Yoshikazu Teranishi, Kouji Kondou, Takeshi Mizota, Yukio Fujiwara, Hidehiko Nonaka, Kazuhiro Yamamoto, Toshiyuki Fujimoto, Shingo Ichimura

研究成果: Article

2 引用 (Scopus)

抄録

A prototype compact cluster ion source has been developed using a metal cluster complex as a low damage-sputtering source, since clusters are said to be effective for so-called "lateral sputtering". Using a metal cluster complex ion gun the Si surface was successfully sputtered with high sputtering yield, and yet resulting in reasonably smooth surface for a sputtered depth of 10 nm. Using the prototype compact cluster ion source, an ion beam containing metal cluster complexes of Os3(CO)12 was generated with an acceleration energy of 10 keV and total fluence, NCB, of 5.2 × 1012 ions (Iave = 0.050 nA, time = 278 min). From the results of AFM and SEM measurements, the sputtered Si surface was found to be reasonably smooth for a sputtering depth of ∼ 10 nm. The sputtered Si portion was found to be a truncated (elliptical) cone. The volume was estimated to be 3.2 × 10-9 cm3, i.e., NSi, the number of removed Si atoms was about 1.6 × 1014. Thus the sputtering yield, NSi/NCB, was estimated to be as large as 30. Surface state characterization and contamination were investigated using XPS (X-ray photoelectron spectroscopy) and AES (Auger electron spectroscopy), showing there was no Os on the sputtered Si surface. These results show that this ion irradiation system using a prototype compact cluster ion source is capable of high rate sputtering resulting in a smooth sputtered surface without deposition, showing the possibility for small penetration depth leading to low damage sputtering, in other words, lateral sputtering due to simultaneous multi-atom bombardment.

元の言語English
ページ(範囲)8641-8645
ページ数5
ジャーナルSurface and Coatings Technology
201
発行部数19-20 SPEC. ISS.
DOI
出版物ステータスPublished - 2007 8 5
外部発表Yes

Fingerprint

Ion sources
Ion bombardment
ion irradiation
ion sources
Sputtering
sputtering
prototypes
metal clusters
Metals
damage
Atoms
Surface states
Auger electron spectroscopy
Ion beams
Auger spectroscopy
electron spectroscopy
atoms
Cones
bombardment
cones

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

これを引用

Observation of a Si surface sputtered by an ion irradiation system using a prototype compact cluster ion source. / Teranishi, Yoshikazu; Kondou, Kouji; Mizota, Takeshi; Fujiwara, Yukio; Nonaka, Hidehiko; Yamamoto, Kazuhiro; Fujimoto, Toshiyuki; Ichimura, Shingo.

:: Surface and Coatings Technology, 巻 201, 番号 19-20 SPEC. ISS., 05.08.2007, p. 8641-8645.

研究成果: Article

Teranishi, Y, Kondou, K, Mizota, T, Fujiwara, Y, Nonaka, H, Yamamoto, K, Fujimoto, T & Ichimura, S 2007, 'Observation of a Si surface sputtered by an ion irradiation system using a prototype compact cluster ion source', Surface and Coatings Technology, 巻. 201, 番号 19-20 SPEC. ISS., pp. 8641-8645. https://doi.org/10.1016/j.surfcoat.2006.02.085
Teranishi, Yoshikazu ; Kondou, Kouji ; Mizota, Takeshi ; Fujiwara, Yukio ; Nonaka, Hidehiko ; Yamamoto, Kazuhiro ; Fujimoto, Toshiyuki ; Ichimura, Shingo. / Observation of a Si surface sputtered by an ion irradiation system using a prototype compact cluster ion source. :: Surface and Coatings Technology. 2007 ; 巻 201, 番号 19-20 SPEC. ISS. pp. 8641-8645.
@article{3506d5afb145476e93291cdafc07630b,
title = "Observation of a Si surface sputtered by an ion irradiation system using a prototype compact cluster ion source",
abstract = "A prototype compact cluster ion source has been developed using a metal cluster complex as a low damage-sputtering source, since clusters are said to be effective for so-called {"}lateral sputtering{"}. Using a metal cluster complex ion gun the Si surface was successfully sputtered with high sputtering yield, and yet resulting in reasonably smooth surface for a sputtered depth of 10 nm. Using the prototype compact cluster ion source, an ion beam containing metal cluster complexes of Os3(CO)12 was generated with an acceleration energy of 10 keV and total fluence, NCB, of 5.2 × 1012 ions (Iave = 0.050 nA, time = 278 min). From the results of AFM and SEM measurements, the sputtered Si surface was found to be reasonably smooth for a sputtering depth of ∼ 10 nm. The sputtered Si portion was found to be a truncated (elliptical) cone. The volume was estimated to be 3.2 × 10-9 cm3, i.e., NSi, the number of removed Si atoms was about 1.6 × 1014. Thus the sputtering yield, NSi/NCB, was estimated to be as large as 30. Surface state characterization and contamination were investigated using XPS (X-ray photoelectron spectroscopy) and AES (Auger electron spectroscopy), showing there was no Os on the sputtered Si surface. These results show that this ion irradiation system using a prototype compact cluster ion source is capable of high rate sputtering resulting in a smooth sputtered surface without deposition, showing the possibility for small penetration depth leading to low damage sputtering, in other words, lateral sputtering due to simultaneous multi-atom bombardment.",
keywords = "Cluster ion, Ion irradiation, Lateral sputtering, Sputtered Si surface",
author = "Yoshikazu Teranishi and Kouji Kondou and Takeshi Mizota and Yukio Fujiwara and Hidehiko Nonaka and Kazuhiro Yamamoto and Toshiyuki Fujimoto and Shingo Ichimura",
year = "2007",
month = "8",
day = "5",
doi = "10.1016/j.surfcoat.2006.02.085",
language = "English",
volume = "201",
pages = "8641--8645",
journal = "Surface and Coatings Technology",
issn = "0257-8972",
publisher = "Elsevier",
number = "19-20 SPEC. ISS.",

}

TY - JOUR

T1 - Observation of a Si surface sputtered by an ion irradiation system using a prototype compact cluster ion source

AU - Teranishi, Yoshikazu

AU - Kondou, Kouji

AU - Mizota, Takeshi

AU - Fujiwara, Yukio

AU - Nonaka, Hidehiko

AU - Yamamoto, Kazuhiro

AU - Fujimoto, Toshiyuki

AU - Ichimura, Shingo

PY - 2007/8/5

Y1 - 2007/8/5

N2 - A prototype compact cluster ion source has been developed using a metal cluster complex as a low damage-sputtering source, since clusters are said to be effective for so-called "lateral sputtering". Using a metal cluster complex ion gun the Si surface was successfully sputtered with high sputtering yield, and yet resulting in reasonably smooth surface for a sputtered depth of 10 nm. Using the prototype compact cluster ion source, an ion beam containing metal cluster complexes of Os3(CO)12 was generated with an acceleration energy of 10 keV and total fluence, NCB, of 5.2 × 1012 ions (Iave = 0.050 nA, time = 278 min). From the results of AFM and SEM measurements, the sputtered Si surface was found to be reasonably smooth for a sputtering depth of ∼ 10 nm. The sputtered Si portion was found to be a truncated (elliptical) cone. The volume was estimated to be 3.2 × 10-9 cm3, i.e., NSi, the number of removed Si atoms was about 1.6 × 1014. Thus the sputtering yield, NSi/NCB, was estimated to be as large as 30. Surface state characterization and contamination were investigated using XPS (X-ray photoelectron spectroscopy) and AES (Auger electron spectroscopy), showing there was no Os on the sputtered Si surface. These results show that this ion irradiation system using a prototype compact cluster ion source is capable of high rate sputtering resulting in a smooth sputtered surface without deposition, showing the possibility for small penetration depth leading to low damage sputtering, in other words, lateral sputtering due to simultaneous multi-atom bombardment.

AB - A prototype compact cluster ion source has been developed using a metal cluster complex as a low damage-sputtering source, since clusters are said to be effective for so-called "lateral sputtering". Using a metal cluster complex ion gun the Si surface was successfully sputtered with high sputtering yield, and yet resulting in reasonably smooth surface for a sputtered depth of 10 nm. Using the prototype compact cluster ion source, an ion beam containing metal cluster complexes of Os3(CO)12 was generated with an acceleration energy of 10 keV and total fluence, NCB, of 5.2 × 1012 ions (Iave = 0.050 nA, time = 278 min). From the results of AFM and SEM measurements, the sputtered Si surface was found to be reasonably smooth for a sputtering depth of ∼ 10 nm. The sputtered Si portion was found to be a truncated (elliptical) cone. The volume was estimated to be 3.2 × 10-9 cm3, i.e., NSi, the number of removed Si atoms was about 1.6 × 1014. Thus the sputtering yield, NSi/NCB, was estimated to be as large as 30. Surface state characterization and contamination were investigated using XPS (X-ray photoelectron spectroscopy) and AES (Auger electron spectroscopy), showing there was no Os on the sputtered Si surface. These results show that this ion irradiation system using a prototype compact cluster ion source is capable of high rate sputtering resulting in a smooth sputtered surface without deposition, showing the possibility for small penetration depth leading to low damage sputtering, in other words, lateral sputtering due to simultaneous multi-atom bombardment.

KW - Cluster ion

KW - Ion irradiation

KW - Lateral sputtering

KW - Sputtered Si surface

UR - http://www.scopus.com/inward/record.url?scp=34447518870&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34447518870&partnerID=8YFLogxK

U2 - 10.1016/j.surfcoat.2006.02.085

DO - 10.1016/j.surfcoat.2006.02.085

M3 - Article

AN - SCOPUS:34447518870

VL - 201

SP - 8641

EP - 8645

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

SN - 0257-8972

IS - 19-20 SPEC. ISS.

ER -