Observation of natural oxide growth on silicon facets using an atomic force microscope with current measurement

Sumio Hosaka*, Hajime Koyanagi, Tsuyoshi Hasegawa, Shigeyuki Hosoki, Atsushi Hiraiwa

*この研究の対応する著者

研究成果: Article査読

6 被引用数 (Scopus)

抄録

Natural oxide growth on silicon facets is observed through an atomic force microscope (AFM) with current measurement. The sample is prepared by means of cleaning and heating a silicon (111) surface with direct electric heating in an ultrahigh vacuum, which creates various facets formed by step bunching. The silicon facets and steps can be observed with the AFM in air. The silicon surface structure and the current distribution can simultaneously be obtained. The results clarify that natural oxide growth on a few special high-index-orientation silicon facets is smaller than that on the other silicon facets ({111}, {110}, {100}, etc.).

本文言語English
ページ(範囲)688-691
ページ数4
ジャーナルJournal of Applied Physics
72
2
DOI
出版ステータスPublished - 1992
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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