Observation of picosecond electron spin relaxation in InGaAsP by time-resolved spin-dependent pump and probe reflection measurement

Ryo Harasawa, Naoki Yamamoto, Hao Wu, Takanori Aritake, Shulong Lu, Lian Ji, Atsushi Tackeuchi

研究成果: Article査読

1 被引用数 (Scopus)

抄録

We have investigated the electron spin relaxation in undoped InGaAsP grown on an InP substrate. Time-resolved spin-dependent pump and probe reflection measurements revealed a spin relaxation behavior between 10 and 300K. We have observed the electron spin relaxation times of 980ps at 10K and 95ps at room temperature. The observed presence of the carrier density dependence and the weak temperature dependence of spin relaxation time imply that the Bir-Aronov-Pikus (BAP) process is effective at 10-30K. At 100-300K, the observed presence of the temperature dependence and the absence of the carrier density dependence of spin relaxation time indicate that the D'yakonov-Perel' (DP) and Elliott-Yafet (EY) processes are effective.

本文言語English
ページ(範囲)1244-1247
ページ数4
ジャーナルPhysica Status Solidi (B) Basic Research
252
6
DOI
出版ステータスPublished - 2015 6 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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