Observation of sputtered Si surface irradiated with metal cluster complex ions

Yoshikazu Teranishi; Kouji Kondou; Yukio Fujiwara; Hidehiko Nonaka; Misuhiro Tomita; Kazuhiro Yamamoto; Toshiyuki Fujimoto; Shingo Ichimura

doi:10.1143/JJAP.45.5528

Observation of sputtered Si surface irradiated with metal cluster complex ions

Yoshikazu Teranishi^*, Kouji Kondou, Yukio Fujiwara, Hidehiko Nonaka, Misuhiro Tomita, Kazuhiro Yamamoto, Toshiyuki Fujimoto, Shingo Ichimura

^*この研究の対応する著者

研究成果 › 査読

9 被引用数 (Scopus)

抄録

We report the results of surface sputtering of Si using a proto type ion source to utilize a compact cluster ion source which was developed using Os ₃(CO)₁₂ as a low-damage sputtering source. The surface roughening of Si sputtered with cluster ions with an acceleration energy of 10 keV at incidence angles between 0 and 60° was investigated. The sputtered Si surface was observed using an atomic force microscope and a scanning electron microscope. At incident angles between 0 and 45°, the surface remained smooth while at 60°, roughening was observed.

本文言語	English
ページ（範囲）	5528-5530
ページ数	3
ジャーナル	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
巻	45
号	6 B
DOI	https://doi.org/10.1143/JJAP.45.5528
出版ステータス	Published - 2006 6月 20
外部発表	はい

ASJC Scopus subject areas

工学（全般）
物理学および天文学（全般）

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10.1143/JJAP.45.5528

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title = "Observation of sputtered Si surface irradiated with metal cluster complex ions",

abstract = "We report the results of surface sputtering of Si using a proto type ion source to utilize a compact cluster ion source which was developed using Os 3(CO)12 as a low-damage sputtering source. The surface roughening of Si sputtered with cluster ions with an acceleration energy of 10 keV at incidence angles between 0 and 60° was investigated. The sputtered Si surface was observed using an atomic force microscope and a scanning electron microscope. At incident angles between 0 and 45°, the surface remained smooth while at 60°, roughening was observed.",

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T1 - Observation of sputtered Si surface irradiated with metal cluster complex ions

AU - Teranishi, Yoshikazu

AU - Kondou, Kouji

AU - Fujiwara, Yukio

AU - Nonaka, Hidehiko

AU - Tomita, Misuhiro

AU - Yamamoto, Kazuhiro

AU - Fujimoto, Toshiyuki

AU - Ichimura, Shingo

PY - 2006/6/20

Y1 - 2006/6/20

N2 - We report the results of surface sputtering of Si using a proto type ion source to utilize a compact cluster ion source which was developed using Os 3(CO)12 as a low-damage sputtering source. The surface roughening of Si sputtered with cluster ions with an acceleration energy of 10 keV at incidence angles between 0 and 60° was investigated. The sputtered Si surface was observed using an atomic force microscope and a scanning electron microscope. At incident angles between 0 and 45°, the surface remained smooth while at 60°, roughening was observed.

AB - We report the results of surface sputtering of Si using a proto type ion source to utilize a compact cluster ion source which was developed using Os 3(CO)12 as a low-damage sputtering source. The surface roughening of Si sputtered with cluster ions with an acceleration energy of 10 keV at incidence angles between 0 and 60° was investigated. The sputtered Si surface was observed using an atomic force microscope and a scanning electron microscope. At incident angles between 0 and 45°, the surface remained smooth while at 60°, roughening was observed.

KW - AFM

KW - Ion cluster

KW - Roughness

KW - Sputter

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U2 - 10.1143/JJAP.45.5528

DO - 10.1143/JJAP.45.5528

M3 - Review article

AN - SCOPUS:33745650482

SN - 0021-4922

VL - 45

SP - 5528

EP - 5530

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 6 B

ER -

Observation of sputtered Si surface irradiated with metal cluster complex ions

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