Observation of sputtered Si surface irradiated with metal cluster complex ions

Yoshikazu Teranishi, Kouji Kondou, Yukio Fujiwara, Hidehiko Nonaka, Misuhiro Tomita, Kazuhiro Yamamoto, Toshiyuki Fujimoto, Shingo Ichimura

研究成果: Review article査読

9 被引用数 (Scopus)

抄録

We report the results of surface sputtering of Si using a proto type ion source to utilize a compact cluster ion source which was developed using Os 3(CO)12 as a low-damage sputtering source. The surface roughening of Si sputtered with cluster ions with an acceleration energy of 10 keV at incidence angles between 0 and 60° was investigated. The sputtered Si surface was observed using an atomic force microscope and a scanning electron microscope. At incident angles between 0 and 45°, the surface remained smooth while at 60°, roughening was observed.

本文言語English
ページ(範囲)5528-5530
ページ数3
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
45
6 B
DOI
出版ステータスPublished - 2006 6 20
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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