Observations of exciton and carrier spin relaxation in Be doped p-type GaAs

Naohiro Asaka, Ryo Harasawa, Shulong Lu, Pan Dai, Atsushi Tackeuchi

研究成果: Article

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We have investigated the exciton and carrier spin relaxation in Be-doped p-type GaAs. Time-resolved spin-dependent photoluminescence (PL) measurements revealed spin relaxation behaviors between 10 and 100 K. Two PL peaks were observed at 1.511 eV (peak 1) and 1.497 eV (peak 2) at 10 K, and are attributed to the recombination of excitons bound to neutral Be acceptors (peak 1) and the band-to-acceptor transition (peak 2). The spin relaxation times of both PL peaks were measured to be 1.3-3.1 ns at 10-100 K, and found to originate from common electron spin relaxation. The observed existence of a carrier density dependence of the spin relaxation time at 10-77 K indicates that the Bir-Aronov-Pikus process is the dominant spin relaxation mechanism.

元の言語English
記事番号112404
ジャーナルApplied Physics Letters
104
発行部数11
DOI
出版物ステータスPublished - 2014 3 17

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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