Ohmic contact to p-GaN using a strained InGaN contact layer and its thermal stability

Kazuhide Kumakura*, Toshiki Makimoto, Naoki Kobayashi

*この研究の対応する著者

研究成果: Article査読

21 被引用数 (Scopus)

抄録

We have formed ohmic contacts to p-GaN using a strained p-InGaN contact layer, and achieved the lowest contact resistance of 1.1 × 10-6 Ω-cm2 at room temperature by optimizing the contact layer thickness and its In mole fraction. We have also evaluated thermal stability of ohmic contacts to p-GaN using the strained p-InGaN contact layer. The contact resistance decreased to 2 × 10-7 Ω-cm2 at 100 C, and increased with elevating temperature above 100°C. In the temperature range up to 400 C, the contact resistances of the samples with the p-InGaN contact layer were smaller than those of the samples without the contact layer. Furthermore, the ohmic characteristics of the strained p-InGaN contact layer were less degraded even after the thermal process, compared with those of the sample without a contact layer. These results indicate that the strained p-InGaN contact layer is favorable for practical application.

本文言語English
ページ(範囲)2254-2256
ページ数3
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
42
4 B
DOI
出版ステータスPublished - 2003 4
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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