An on-chip supply voltage conversion system for VLSI DRAMs, which realizes supply voltage reduction in whole RAM circuits, is proposed and applied to a 4Mb DRAM. Implementing the system on a DRAM, short channel MOSFETs could be utilized, thus achieving faster access time than a DRAM using conventional long channel MOSFETs. The system has been successfully demonstrated to be effective for high density and high speed DRAMs.
|ホスト出版物のタイトル||Conference on Solid State Devices and Materials|
|出版社||Business Cent for Academic Soc Japan|
|出版ステータス||Published - 1986 1 1|
|名前||Conference on Solid State Devices and Materials|
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