ON current enhancement of nanowire Schottky barrier tunnel field effect transistors

Kohei Takei, Shuichiro Hashimoto, Jing Sun, Xu Zhang, Shuhei Asada, Taiyu Xu, Takashi Matsukawa, Meishoku Masahara, Takanobu Watanabe

    研究成果: Article

    2 引用 (Scopus)

    抄録

    Silicon nanowire Schottky barrier tunnel field effect transistors (NW-SBTFETs) are promising structures for high performance devices. In this study, we fabricated NW-SBTFETs to investigate the effect of nanowire structure on the device characteristics. The NW-SBTFETs were operated with a backgate bias, and the experimental results demonstrate that the ON current density is enhanced by narrowing the width of the nanowire. We confirmed using the Fowler-Nordheim plot that the drain current in the ON state mainly comprises the quantum tunneling component through the Schottky barrier. Comparison with a technology computer aided design (TCAD) simulation revealed that the enhancement is attributed to the electric field concentration at the corners of cross-section of the NW. The study findings suggest an effective approach to securing the ON current by Schottky barrier width modulation.

    元の言語English
    記事番号04ED07
    ジャーナルJapanese Journal of Applied Physics
    55
    発行部数4
    DOI
    出版物ステータスPublished - 2016 4 1

    Fingerprint

    Field effect transistors
    Nanowires
    tunnels
    Tunnels
    nanowires
    field effect transistors
    augmentation
    Drain current
    computer aided design
    Computer aided design
    Current density
    plots
    Electric fields
    Modulation
    current density
    modulation
    Silicon
    electric fields
    cross sections
    silicon

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    これを引用

    ON current enhancement of nanowire Schottky barrier tunnel field effect transistors. / Takei, Kohei; Hashimoto, Shuichiro; Sun, Jing; Zhang, Xu; Asada, Shuhei; Xu, Taiyu; Matsukawa, Takashi; Masahara, Meishoku; Watanabe, Takanobu.

    :: Japanese Journal of Applied Physics, 巻 55, 番号 4, 04ED07, 01.04.2016.

    研究成果: Article

    Takei, K, Hashimoto, S, Sun, J, Zhang, X, Asada, S, Xu, T, Matsukawa, T, Masahara, M & Watanabe, T 2016, 'ON current enhancement of nanowire Schottky barrier tunnel field effect transistors', Japanese Journal of Applied Physics, 巻. 55, 番号 4, 04ED07. https://doi.org/10.7567/JJAP.55.04ED07
    Takei, Kohei ; Hashimoto, Shuichiro ; Sun, Jing ; Zhang, Xu ; Asada, Shuhei ; Xu, Taiyu ; Matsukawa, Takashi ; Masahara, Meishoku ; Watanabe, Takanobu. / ON current enhancement of nanowire Schottky barrier tunnel field effect transistors. :: Japanese Journal of Applied Physics. 2016 ; 巻 55, 番号 4.
    @article{f95410b56b3b4e2bb120e5c31c0a6db0,
    title = "ON current enhancement of nanowire Schottky barrier tunnel field effect transistors",
    abstract = "Silicon nanowire Schottky barrier tunnel field effect transistors (NW-SBTFETs) are promising structures for high performance devices. In this study, we fabricated NW-SBTFETs to investigate the effect of nanowire structure on the device characteristics. The NW-SBTFETs were operated with a backgate bias, and the experimental results demonstrate that the ON current density is enhanced by narrowing the width of the nanowire. We confirmed using the Fowler-Nordheim plot that the drain current in the ON state mainly comprises the quantum tunneling component through the Schottky barrier. Comparison with a technology computer aided design (TCAD) simulation revealed that the enhancement is attributed to the electric field concentration at the corners of cross-section of the NW. The study findings suggest an effective approach to securing the ON current by Schottky barrier width modulation.",
    author = "Kohei Takei and Shuichiro Hashimoto and Jing Sun and Xu Zhang and Shuhei Asada and Taiyu Xu and Takashi Matsukawa and Meishoku Masahara and Takanobu Watanabe",
    year = "2016",
    month = "4",
    day = "1",
    doi = "10.7567/JJAP.55.04ED07",
    language = "English",
    volume = "55",
    journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
    issn = "0021-4922",
    publisher = "Japan Society of Applied Physics",
    number = "4",

    }

    TY - JOUR

    T1 - ON current enhancement of nanowire Schottky barrier tunnel field effect transistors

    AU - Takei, Kohei

    AU - Hashimoto, Shuichiro

    AU - Sun, Jing

    AU - Zhang, Xu

    AU - Asada, Shuhei

    AU - Xu, Taiyu

    AU - Matsukawa, Takashi

    AU - Masahara, Meishoku

    AU - Watanabe, Takanobu

    PY - 2016/4/1

    Y1 - 2016/4/1

    N2 - Silicon nanowire Schottky barrier tunnel field effect transistors (NW-SBTFETs) are promising structures for high performance devices. In this study, we fabricated NW-SBTFETs to investigate the effect of nanowire structure on the device characteristics. The NW-SBTFETs were operated with a backgate bias, and the experimental results demonstrate that the ON current density is enhanced by narrowing the width of the nanowire. We confirmed using the Fowler-Nordheim plot that the drain current in the ON state mainly comprises the quantum tunneling component through the Schottky barrier. Comparison with a technology computer aided design (TCAD) simulation revealed that the enhancement is attributed to the electric field concentration at the corners of cross-section of the NW. The study findings suggest an effective approach to securing the ON current by Schottky barrier width modulation.

    AB - Silicon nanowire Schottky barrier tunnel field effect transistors (NW-SBTFETs) are promising structures for high performance devices. In this study, we fabricated NW-SBTFETs to investigate the effect of nanowire structure on the device characteristics. The NW-SBTFETs were operated with a backgate bias, and the experimental results demonstrate that the ON current density is enhanced by narrowing the width of the nanowire. We confirmed using the Fowler-Nordheim plot that the drain current in the ON state mainly comprises the quantum tunneling component through the Schottky barrier. Comparison with a technology computer aided design (TCAD) simulation revealed that the enhancement is attributed to the electric field concentration at the corners of cross-section of the NW. The study findings suggest an effective approach to securing the ON current by Schottky barrier width modulation.

    UR - http://www.scopus.com/inward/record.url?scp=84963690489&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84963690489&partnerID=8YFLogxK

    U2 - 10.7567/JJAP.55.04ED07

    DO - 10.7567/JJAP.55.04ED07

    M3 - Article

    AN - SCOPUS:84963690489

    VL - 55

    JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    SN - 0021-4922

    IS - 4

    M1 - 04ED07

    ER -