ON current enhancement of nanowire Schottky barrier tunnel field effect transistors

Kohei Takei, Shuichiro Hashimoto, Jing Sun, Xu Zhang, Shuhei Asada, Taiyu Xu, Takashi Matsukawa, Meishoku Masahara, Takanobu Watanabe

    研究成果: Article

    2 引用 (Scopus)

    抜粋

    Silicon nanowire Schottky barrier tunnel field effect transistors (NW-SBTFETs) are promising structures for high performance devices. In this study, we fabricated NW-SBTFETs to investigate the effect of nanowire structure on the device characteristics. The NW-SBTFETs were operated with a backgate bias, and the experimental results demonstrate that the ON current density is enhanced by narrowing the width of the nanowire. We confirmed using the Fowler-Nordheim plot that the drain current in the ON state mainly comprises the quantum tunneling component through the Schottky barrier. Comparison with a technology computer aided design (TCAD) simulation revealed that the enhancement is attributed to the electric field concentration at the corners of cross-section of the NW. The study findings suggest an effective approach to securing the ON current by Schottky barrier width modulation.

    元の言語English
    記事番号04ED07
    ジャーナルJapanese Journal of Applied Physics
    55
    発行部数4
    DOI
    出版物ステータスPublished - 2016 4 1

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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  • これを引用

    Takei, K., Hashimoto, S., Sun, J., Zhang, X., Asada, S., Xu, T., Matsukawa, T., Masahara, M., & Watanabe, T. (2016). ON current enhancement of nanowire Schottky barrier tunnel field effect transistors. Japanese Journal of Applied Physics, 55(4), [04ED07]. https://doi.org/10.7567/JJAP.55.04ED07