We investigate the gain mechanism in a current GaN based laser diode design using the variable stripe length method and optical nanosecond excitation. The combination of absorption measurements, gain spectra and photoluminescence excitation data allows us to understand the fundamental mechanisms responsible for gain in these devices. We conclude that optical amplification is due to a conventional two-dimensional electron-hole plasma in contrast to the spontaneous emission mechanism in similar light emitting diode structures.
ASJC Scopus subject areas
- 化学 (全般)