@article{b684da56787f4e01939a19bbf1ee4ab9,
title = "On the gain mechanism in GaN based laser diodes",
abstract = "We investigate the gain mechanism in a current GaN based laser diode design using the variable stripe length method and optical nanosecond excitation. The combination of absorption measurements, gain spectra and photoluminescence excitation data allows us to understand the fundamental mechanisms responsible for gain in these devices. We conclude that optical amplification is due to a conventional two-dimensional electron-hole plasma in contrast to the spontaneous emission mechanism in similar light emitting diode structures.",
keywords = "A. semiconductors, D. optical properties, E. nonlinear optics",
author = "G. Mohs and T. Aoki and R. Shimano and M. Kuwata-Gonokami and S. Nakamura",
note = "Funding Information: In summary we showed that the optical amplification in GaN based laser diodes is the result of a confined electron-hole plasma in the quantum wells of the device. Trap centers are only involved in the spontaneous emission process. Gain, absorption and photoluminescence excitation spectra all agree very well with each other and show the confined level of the quantum wells. This work was supported by Core Research for Evolution Science and Technology (CREST) from the Japan Science and Technology Corporation (JST) and by a grant in aid for COE research from the ministry of Education, Science, Sports and Culture of Japan.",
year = "1998",
month = aug,
day = "21",
doi = "10.1016/S0038-1098(98)00309-3",
language = "English",
volume = "108",
pages = "105--109",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier Limited",
number = "2",
}