On the origin of the gate oxide failure evaluated by Raman spectroscopy

R. Yokogawa, Motohiro Tomita, T. Mizukoshi, T. Hirano, K. Kusano, K. Sasaki, A. Ogura

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

The metal-oxide-semiconductor-field-effect-transistor (MOSFET) has been miniaturized for the high performance large-scale integrated-circuit (LSI). However, in the ultimately miniaturized MOSFET, the gate oxide failure with high leakage current is inevitable. In this study, we evaluated the origin of the gate oxide failure by Raman spectroscopy in conjunction with optical beam induced resistance change (OBIRCH) analysis. We confirmed the higher Raman intensity than the other positions at the gate oxide failure position, where the OBIRCH analysis shows the light emission. Moreover, we found that the origin on the gate oxide failure was high tensile strain in the gate polycrystalline silicon electrode.

本文言語English
ホスト出版物のタイトルSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5
出版社Electrochemical Society Inc.
ページ237-243
ページ数7
66
4
ISBN(電子版)9781607685395
DOI
出版ステータスPublished - 2015 1 1
外部発表はい
イベントSymposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting - Chicago, United States
継続期間: 2015 5 242015 5 28

Other

OtherSymposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting
国/地域United States
CityChicago
Period15/5/2415/5/28

ASJC Scopus subject areas

  • 工学(全般)

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