On the scaling limit of the Si-IGBTs with very narrow mesa structure

Katsumi Eikyu, Atsushi Sakai, Hitoshi Matsuura, Yoshito Nakazawa, Yutaka Akiyama, Yasuo Yamaguchi, Masahide Inuishi

研究成果: Conference contribution

16 引用 (Scopus)

抄録

The very narrow mesa structures based on our 7th generation IGBT process are fabricated and it is found that the device with the narrowest mesa shows very poor short circuit (SC) withstand capability although it suppresses the conduction loss considerably. This poor SC capacity is caused by non-saturated output characteristics which are originated by collector bias induced barrier lowering in the middle of Si mesa. The current filamentation is observed in the 3D multi-cell short circuit simulation with self-heating and the SC capacity degradation due to the filamentation is enhanced in the narrower mesa structure.

元の言語English
ホスト出版物のタイトルProceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
出版者Institute of Electrical and Electronics Engineers Inc.
ページ211-214
ページ数4
2016-July
ISBN(電子版)9781467387682
DOI
出版物ステータスPublished - 2016 7 25
外部発表Yes
イベント28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 - Prague, Czech Republic
継続期間: 2016 6 122016 6 16

Other

Other28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
Czech Republic
Prague
期間16/6/1216/6/16

Fingerprint

Insulated gate bipolar transistors (IGBT)
Short circuit currents
Circuit simulation
Heating
Degradation

ASJC Scopus subject areas

  • Engineering(all)

これを引用

Eikyu, K., Sakai, A., Matsuura, H., Nakazawa, Y., Akiyama, Y., Yamaguchi, Y., & Inuishi, M. (2016). On the scaling limit of the Si-IGBTs with very narrow mesa structure. : Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 (巻 2016-July, pp. 211-214). [7520815] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2016.7520815

On the scaling limit of the Si-IGBTs with very narrow mesa structure. / Eikyu, Katsumi; Sakai, Atsushi; Matsuura, Hitoshi; Nakazawa, Yoshito; Akiyama, Yutaka; Yamaguchi, Yasuo; Inuishi, Masahide.

Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. 巻 2016-July Institute of Electrical and Electronics Engineers Inc., 2016. p. 211-214 7520815.

研究成果: Conference contribution

Eikyu, K, Sakai, A, Matsuura, H, Nakazawa, Y, Akiyama, Y, Yamaguchi, Y & Inuishi, M 2016, On the scaling limit of the Si-IGBTs with very narrow mesa structure. : Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. 巻. 2016-July, 7520815, Institute of Electrical and Electronics Engineers Inc., pp. 211-214, 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016, Prague, Czech Republic, 16/6/12. https://doi.org/10.1109/ISPSD.2016.7520815
Eikyu K, Sakai A, Matsuura H, Nakazawa Y, Akiyama Y, Yamaguchi Y その他. On the scaling limit of the Si-IGBTs with very narrow mesa structure. : Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. 巻 2016-July. Institute of Electrical and Electronics Engineers Inc. 2016. p. 211-214. 7520815 https://doi.org/10.1109/ISPSD.2016.7520815
Eikyu, Katsumi ; Sakai, Atsushi ; Matsuura, Hitoshi ; Nakazawa, Yoshito ; Akiyama, Yutaka ; Yamaguchi, Yasuo ; Inuishi, Masahide. / On the scaling limit of the Si-IGBTs with very narrow mesa structure. Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. 巻 2016-July Institute of Electrical and Electronics Engineers Inc., 2016. pp. 211-214
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