On the scaling limit of the Si-IGBTs with very narrow mesa structure

Katsumi Eikyu, Atsushi Sakai, Hitoshi Matsuura, Yoshito Nakazawa, Yutaka Akiyama, Yasuo Yamaguchi, Masahide Inuishi

研究成果: Conference contribution

31 被引用数 (Scopus)

抄録

The very narrow mesa structures based on our 7th generation IGBT process are fabricated and it is found that the device with the narrowest mesa shows very poor short circuit (SC) withstand capability although it suppresses the conduction loss considerably. This poor SC capacity is caused by non-saturated output characteristics which are originated by collector bias induced barrier lowering in the middle of Si mesa. The current filamentation is observed in the 3D multi-cell short circuit simulation with self-heating and the SC capacity degradation due to the filamentation is enhanced in the narrower mesa structure.

本文言語English
ホスト出版物のタイトルProceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
出版社Institute of Electrical and Electronics Engineers Inc.
ページ211-214
ページ数4
ISBN(電子版)9781467387682
DOI
出版ステータスPublished - 2016 7 25
外部発表はい
イベント28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 - Prague, Czech Republic
継続期間: 2016 6 122016 6 16

出版物シリーズ

名前Proceedings of the International Symposium on Power Semiconductor Devices and ICs
2016-July
ISSN(印刷版)1063-6854

Other

Other28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
国/地域Czech Republic
CityPrague
Period16/6/1216/6/16

ASJC Scopus subject areas

  • 工学(全般)

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