Operation voltage dependence of memory cell characteristics in fully depleted floating-body cell

Tomoaki Shino, Takashi Ohsawa, Tomoki Higashi, Katsuyuki Fujita, Naoki Kusunoki, Yoshihiro Minami, Mutsuo Morikado, Hiroomi Nakajima, Kazumi Inoh, Takeshi Hamamoto, Akihiro Nitayama

研究成果: Article査読

17 被引用数 (Scopus)

抄録

A one-transistor memory cell on silicon-on-insulator, called floating-body cell (FBC), has been developed and demonstrated. Threshold voltage difference between the "0"-state and the "1"-state, which is a key parameter for realizing a large-scale memory by FBCs, is measured and analyzed using a 96 kb array diagnostic monitor (ADM). A function test of the ADM yielded a fail-bit probability of 0.002%. A new metric relating to the fail-bit probability, that is, the ratio of the threshold voltage difference over the total threshold voltage variation, is introduced and applied to the measurement results. Read current distributions are also evaluated for various operation voltages. This paper also investigates substrate bias dependence of the threshold voltage unique to fully-depleted devices. Channel impurity and substrate impurity concentration dependence of the threshold voltage are analyzed based on experimental data and device simulation.

本文言語English
ページ(範囲)2220-2225
ページ数6
ジャーナルIEEE Transactions on Electron Devices
52
10
DOI
出版ステータスPublished - 2005 10 1
外部発表はい

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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