Optical, electrical and structural properties of polycrystalline β-FeSi2 thin films fabricated by electron beam evaporation of ferrosilicon

H. Katsumata, Y. Makita, H. Takahashi, H. Shibata, Naoto Kobayashi, M. Hasegawa, S. Kimura, A. Obara, J. Tanabe, S. Uekusa

研究成果: Conference contribution

抄録

Ferrosilicon (FeSi2) grains (99.9%) were evaporated at room temperature onto the (100)-oriented n-type FZ Si substrates using electron beam deposition technique. Optical, electrical and structural properties were systematically investigated as a function of subsequent isochronal (2 hrs) annealing temperature (Ta) in the range of 400 to approximately 950 °C. X-ray diffraction and Raman scattering analysis suggested the formation of polycrystalline β-FeSi2 above Ta = 500 °C, whereas above Ta = 800 °C, Si agglomeration was observed to form. The electrical resistivity of these samples reached a maximum (0.542 Ω·cm) at Ta = 700 °C, and then it decreased with increasing Ta. Its decrease process was explained by considering the creation of Si vacancies, which could presumably be acting as holes. It is of great interest that in Ta = 600 to approximately 800 °C, the majority carrier converts from n- to p-type. Typical carrier concentrations and mobilities were determined to be μn = 39.4 cm2/V·sec, ne = 6.59×1017 cm-3 for n-type β-FeSi2 with Ta = 600 °C and μh = 20.3 cm2/V·sec, nh = 2.22×1018 cm-3 for p-type β-FeSi2 with Ta = 850 °C. Optical absorption measurements revealed that the nature of the bandgap varies from an indirect to direct one with increasing Ta.

元の言語English
ホスト出版物のタイトルInternational Conference on Thermoelectrics, ICT, Proceedings
ページ479-483
ページ数5
出版物ステータスPublished - 1996
外部発表Yes
イベントProceedings of the 1996 15th International Conference on Thermoelectrics, ICT'96 - Pasadena, CA, USA
継続期間: 1996 3 261996 3 29

Other

OtherProceedings of the 1996 15th International Conference on Thermoelectrics, ICT'96
Pasadena, CA, USA
期間96/3/2696/3/29

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Structural properties
Electron beams
Evaporation
Electric properties
Optical properties
Thin films
Temperature
Carrier mobility
Light absorption
Vacancies
Carrier concentration
Raman scattering
Energy gap
Agglomeration
Annealing
X ray diffraction
Substrates

ASJC Scopus subject areas

  • Engineering(all)

これを引用

Katsumata, H., Makita, Y., Takahashi, H., Shibata, H., Kobayashi, N., Hasegawa, M., ... Uekusa, S. (1996). Optical, electrical and structural properties of polycrystalline β-FeSi2 thin films fabricated by electron beam evaporation of ferrosilicon. : International Conference on Thermoelectrics, ICT, Proceedings (pp. 479-483)

Optical, electrical and structural properties of polycrystalline β-FeSi2 thin films fabricated by electron beam evaporation of ferrosilicon. / Katsumata, H.; Makita, Y.; Takahashi, H.; Shibata, H.; Kobayashi, Naoto; Hasegawa, M.; Kimura, S.; Obara, A.; Tanabe, J.; Uekusa, S.

International Conference on Thermoelectrics, ICT, Proceedings. 1996. p. 479-483.

研究成果: Conference contribution

Katsumata, H, Makita, Y, Takahashi, H, Shibata, H, Kobayashi, N, Hasegawa, M, Kimura, S, Obara, A, Tanabe, J & Uekusa, S 1996, Optical, electrical and structural properties of polycrystalline β-FeSi2 thin films fabricated by electron beam evaporation of ferrosilicon. : International Conference on Thermoelectrics, ICT, Proceedings. pp. 479-483, Proceedings of the 1996 15th International Conference on Thermoelectrics, ICT'96, Pasadena, CA, USA, 96/3/26.
Katsumata H, Makita Y, Takahashi H, Shibata H, Kobayashi N, Hasegawa M その他. Optical, electrical and structural properties of polycrystalline β-FeSi2 thin films fabricated by electron beam evaporation of ferrosilicon. : International Conference on Thermoelectrics, ICT, Proceedings. 1996. p. 479-483
Katsumata, H. ; Makita, Y. ; Takahashi, H. ; Shibata, H. ; Kobayashi, Naoto ; Hasegawa, M. ; Kimura, S. ; Obara, A. ; Tanabe, J. ; Uekusa, S. / Optical, electrical and structural properties of polycrystalline β-FeSi2 thin films fabricated by electron beam evaporation of ferrosilicon. International Conference on Thermoelectrics, ICT, Proceedings. 1996. pp. 479-483
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AU - Katsumata, H.

AU - Makita, Y.

AU - Takahashi, H.

AU - Shibata, H.

AU - Kobayashi, Naoto

AU - Hasegawa, M.

AU - Kimura, S.

AU - Obara, A.

AU - Tanabe, J.

AU - Uekusa, S.

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