We propose the use of an evanescent field of waveguided light transmitted along a portion of an optical fiber with the cladding removed (a cladless optical fiber) to obtain the optical energy gap (E0) of a semiconductor. Through our study of this new method of measurement, it is clarified that E0 of hydrogenated amorphous silicon (a-Si:H) semiconductor can be determined using a longer fabricated film which is thinner than ordinarily used. While ordinary methods of measurement require a film thickness on the order of 1 μm, this new method of measurement requires a film thickness on the order of 4 nm, with the cladless part of 50 mm in length.
|ジャーナル||Japanese Journal of Applied Physics, Part 2: Letters|
|出版ステータス||Published - 1993 10 1|
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