Optical input power tolerance of InGaAsP electroabsorption modulator

Noriyoshi Hoshi; Takashi Mitsuma; Hideaki Tanaka; Yuichi Matsushima

Optical input power tolerance of InGaAsP electroabsorption modulator

Noriyoshi Hoshi^*, Takashi Mitsuma, Hideaki Tanaka, Yuichi Matsushima

^*この研究の対応する著者

研究成果: Chapter

抄録

We present long-term life tests of EA modulator modules under high optical input power over +10 dBm for the first time. The module tested under +13 dBm input with -10 V bias did not show any degradation over 3700 hrs. In addition, we discuss degradation mechanisms in modules tested over +15 dBm input with -10 V bias.

本文言語	English
ホスト出版物のタイトル	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
出版社	IEEE
ページ	115-118
ページ数	4
出版ステータス	Published - 1999
外部発表	はい
イベント	Proceedings of the 1999 11th International Conference on Indium Phosphide and Related Materials (IPRM) - Davos, Switz 継続期間: 1999 5月 16 → 1999 5月 20

Other

Other	Proceedings of the 1999 11th International Conference on Indium Phosphide and Related Materials (IPRM)
City	Davos, Switz
Period	99/5/16 → 99/5/20

ASJC Scopus subject areas

材料科学（全般）
物理学および天文学（全般）

他のファイルとリンク

引用スタイル

@inbook{b8c06ac0326446b99a88749d96b97eb5,

title = "Optical input power tolerance of InGaAsP electroabsorption modulator",

abstract = "We present long-term life tests of EA modulator modules under high optical input power over +10 dBm for the first time. The module tested under +13 dBm input with -10 V bias did not show any degradation over 3700 hrs. In addition, we discuss degradation mechanisms in modules tested over +15 dBm input with -10 V bias.",

author = "Noriyoshi Hoshi and Takashi Mitsuma and Hideaki Tanaka and Yuichi Matsushima",

year = "1999",

language = "English",

pages = "115--118",

booktitle = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

publisher = "IEEE",

note = "Proceedings of the 1999 11th International Conference on Indium Phosphide and Related Materials (IPRM) ; Conference date: 16-05-1999 Through 20-05-1999",

}

TY - CHAP

T1 - Optical input power tolerance of InGaAsP electroabsorption modulator

AU - Hoshi, Noriyoshi

AU - Mitsuma, Takashi

AU - Tanaka, Hideaki

AU - Matsushima, Yuichi

PY - 1999

Y1 - 1999

N2 - We present long-term life tests of EA modulator modules under high optical input power over +10 dBm for the first time. The module tested under +13 dBm input with -10 V bias did not show any degradation over 3700 hrs. In addition, we discuss degradation mechanisms in modules tested over +15 dBm input with -10 V bias.

AB - We present long-term life tests of EA modulator modules under high optical input power over +10 dBm for the first time. The module tested under +13 dBm input with -10 V bias did not show any degradation over 3700 hrs. In addition, we discuss degradation mechanisms in modules tested over +15 dBm input with -10 V bias.

UR - http://www.scopus.com/inward/record.url?scp=0032645483&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032645483&partnerID=8YFLogxK

M3 - Chapter

AN - SCOPUS:0032645483

SP - 115

EP - 118

BT - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

PB - IEEE

T2 - Proceedings of the 1999 11th International Conference on Indium Phosphide and Related Materials (IPRM)

Y2 - 16 May 1999 through 20 May 1999

ER -

Optical input power tolerance of InGaAsP electroabsorption modulator

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Other

ASJC Scopus subject areas

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