Surface photo-absorption (SPA) is a newly developed in-situ optical monitoring technique for the epitaxial growth process. This method is based on the reflectivity measurement of P-polarized light incident at the Brewster angle. This configuration minimizes bulk GaAs contribution to the total light reflection. The small change in reflected light intensity between Ga and As atomic surfaces during flow-rate Modulation Epitaxy (FME) of GaAs is thus detected with a high signal-to-noise ratio. By using this characteristic, GaAs growth rate can be monitored in-situ on an atomic scale. In addition to the in-situ monitoring of growth rate, the decomposition process of Ga and As precursors can be studied by SPA. We demonstrate the investigation of decomposition process of Ga organometals, and discuss the growth mechanisms of FME and atomic layer epitaxy.
|出版物ステータス||Published - 1990 12 1|
|イベント||22nd International Conference on Solid State Devices and Materials - Sendai, Jpn|
継続期間: 1990 8 22 → 1990 8 24
|Other||22nd International Conference on Solid State Devices and Materials|
|期間||90/8/22 → 90/8/24|
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