Optical observation of carrier accumulation in single-walled carbon nanotube transistors

Taishi Takenobu, Yuji Murayama, Masashi Shiraishi, Yoshihiro Iwasa

研究成果: Article

9 引用 (Scopus)

抄録

Electric-field-induced spectral changes in single-walled carbon nanotubes were studied using a thin-film transistor configuration. As a function of electric field, the optical spectra displayed continuous intensity modulations. This is the direct evidence of carrier accumulation, and the amount of accumulated carriers was quantitatively consistent with the carrier density in the nanoscale wire-form field-effect transistor model.

元の言語English
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
45
発行部数42-45
DOI
出版物ステータスPublished - 2006 11 10
外部発表Yes

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Single-walled carbon nanotubes (SWCN)
Transistors
transistors
carbon nanotubes
Electric fields
electric fields
Thin film transistors
Field effect transistors
Carrier concentration
optical spectrum
field effect transistors
Modulation
wire
Wire
modulation
thin films
configurations

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

これを引用

Optical observation of carrier accumulation in single-walled carbon nanotube transistors. / Takenobu, Taishi; Murayama, Yuji; Shiraishi, Masashi; Iwasa, Yoshihiro.

:: Japanese Journal of Applied Physics, Part 2: Letters, 巻 45, 番号 42-45, 10.11.2006.

研究成果: Article

Takenobu, Taishi ; Murayama, Yuji ; Shiraishi, Masashi ; Iwasa, Yoshihiro. / Optical observation of carrier accumulation in single-walled carbon nanotube transistors. :: Japanese Journal of Applied Physics, Part 2: Letters. 2006 ; 巻 45, 番号 42-45.
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