抄録
We report on all optically active phonon frequencies of wurtzite GaN determined using Raman, infrared reflection, and attenuated total reflection spectra of a high quality GaN film of 2 μm thickness. We also show results of lattice dynamical calculations using a rigid ion model. Force constants and charge as fitting parameters were determined so as to reproduce all zone-center phonon frequencies and sound velocities for the high symmetry lines. We present phonon dispersion curves and phonon density of states of wurtzite GaN.
本文言語 | English |
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ページ(範囲) | 493-495 |
ページ数 | 3 |
ジャーナル | Physica B: Condensed Matter |
巻 | 219-220 |
号 | 1-4 |
DOI | |
出版ステータス | Published - 1996 4月 1 |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 凝縮系物理学
- 電子工学および電気工学