Optical properties of a 5 nm thick InGaN active layer with In content less than a few percent in an ultraviolet light emitting diode, have been studied by employing reflectance, transmittance, and photoluminescence spectroscopy. The co-existence of the localized electronic states and the usual confined ones in the active layer has been demonstrated. A possible origin of the co-existence of those states is attributed to the non-random alloy potential fluctuation in the InGaN active layer.
|ジャーナル||Japanese Journal of Applied Physics, Part 2: Letters|
|出版ステータス||Published - 1999 9 15|
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