Optical properties of an InGaN active layer in ultraviolet light emitting diode

Takahiro Deguchi, Kosuke Torii, Kazuhiro Shimada, Takayuki Sota, Ryuji Matsuo, Mutsumi Sugiyama, Akiko Setoguchi, Shigefusa Chichibu, Shuji Nakamura

研究成果: Article査読

1 被引用数 (Scopus)

抄録

Optical properties of a 5 nm thick InGaN active layer with In content less than a few percent in an ultraviolet light emitting diode, have been studied by employing reflectance, transmittance, and photoluminescence spectroscopy. The co-existence of the localized electronic states and the usual confined ones in the active layer has been demonstrated. A possible origin of the co-existence of those states is attributed to the non-random alloy potential fluctuation in the InGaN active layer.

本文言語English
ページ(範囲)L975-L977
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
38
9 A/B
出版ステータスPublished - 1999 9 15

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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