Optical properties of MBE-grown ZnTe epilayers

Gotthard Kudlek; Nazmir Presser; Juergen Gutowski; David L. Mathine; Masakazu Kobayashi; Robert I. Gunshor

Optical properties of MBE-grown ZnTe epilayers

Gotthard Kudlek, Nazmir Presser, Juergen Gutowski, David L. Mathine, Masakazu Kobayashi, Robert I. Gunshor

研究成果: Conference article › 査読

抄録

ZnTe is a promising material for optoelectronic devices because of its wide direct band gap in the green region of the spectrum. Systematic comparative studies of the optical properties in the excitonic energy regime of MBE-grown ZnTe/GaAs and ZnTe/GaSb epilayers are presented. For these different substrate materials, the authors investigated the influence of strain between layer and substrate, possible incorporation of impurities, electronic structure of the impurity-related exciton complexes, and biexciton recombination processes at high-density excitation.

本文言語	English
ページ（範囲）	150-158
ページ数	9
ジャーナル	Proceedings of SPIE - The International Society for Optical Engineering
巻	1361
号	pt 1
出版ステータス	Published - 1991 1 1
外部発表	はい
イベント	Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization - Aachen, Ger 継続期間: 1990 10 28 → 1990 11 2

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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引用スタイル

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T1 - Optical properties of MBE-grown ZnTe epilayers

AU - Kudlek, Gotthard

AU - Presser, Nazmir

AU - Gutowski, Juergen

AU - Mathine, David L.

AU - Kobayashi, Masakazu

AU - Gunshor, Robert I.

PY - 1991/1/1

Y1 - 1991/1/1

N2 - ZnTe is a promising material for optoelectronic devices because of its wide direct band gap in the green region of the spectrum. Systematic comparative studies of the optical properties in the excitonic energy regime of MBE-grown ZnTe/GaAs and ZnTe/GaSb epilayers are presented. For these different substrate materials, the authors investigated the influence of strain between layer and substrate, possible incorporation of impurities, electronic structure of the impurity-related exciton complexes, and biexciton recombination processes at high-density excitation.

AB - ZnTe is a promising material for optoelectronic devices because of its wide direct band gap in the green region of the spectrum. Systematic comparative studies of the optical properties in the excitonic energy regime of MBE-grown ZnTe/GaAs and ZnTe/GaSb epilayers are presented. For these different substrate materials, the authors investigated the influence of strain between layer and substrate, possible incorporation of impurities, electronic structure of the impurity-related exciton complexes, and biexciton recombination processes at high-density excitation.

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AN - SCOPUS:0025792687

VL - 1361

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JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

IS - pt 1

T2 - Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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