抄録
ZnTe is a promising material for optoelectronic devices because of its wide direct band gap in the green region of the spectrum. Systematic comparative studies of the optical properties in the excitonic energy regime of MBE-grown ZnTe/GaAs and ZnTe/GaSb epilayers are presented. For these different substrate materials, the authors investigated the influence of strain between layer and substrate, possible incorporation of impurities, electronic structure of the impurity-related exciton complexes, and biexciton recombination processes at high-density excitation.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 150-158 |
| ページ数 | 9 |
| ジャーナル | Proceedings of SPIE - The International Society for Optical Engineering |
| 巻 | 1361 |
| 号 | pt 1 |
| 出版ステータス | Published - 1991 1月 1 |
| 外部発表 | はい |
| イベント | Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization - Aachen, Ger 継続期間: 1990 10月 28 → 1990 11月 2 |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 凝縮系物理学
- コンピュータ サイエンスの応用
- 応用数学
- 電子工学および電気工学