Optical properties of Si-, Ge- and Sn-doped GaN

A. Shikanai*, H. Fukahori, Y. Kawakami, K. Hazu, T. Sota, T. Mitani, T. Mukai, Sg Fujita

*この研究の対応する著者

研究成果: Article査読

17 被引用数 (Scopus)

抄録

Photoluminescence and reflectance spectra of Si-, Ge- and Sn-doped GaN epilayers grown on sapphire substrates at 10 K have been investigated, by which ionization energies on the Ga site were determined as 29, 30 and 33 meV, respectively. To investigate the coherent properties of excitons, the dephasing times of excitons in undoped and Si-doped GaN on sapphire substrates and freestanding GaN were measured using the degenerate four-wave mixing technique. The resulting homogeneous broadenings in undoped and Si-doped GaN on sapphire substrates were about twice as large as that in freestanding GaN, which indicates that defect-induced scattering is stronger in the former than in the latter.

本文言語English
ページ(範囲)26-30
ページ数5
ジャーナルPhysica Status Solidi (B) Basic Research
235
1
DOI
出版ステータスPublished - 2003 1月 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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