Optical properties of tensile-strained wurtzite GaN epitaxial layers

S. Chichibu*, T. Azuhata, T. Sota, H. Amano, I. Akasaki

*この研究の対応する著者

研究成果: Article査読

60 被引用数 (Scopus)

抄録

Photo-modulated electroreflectance and photoluminescence spectra of wurtzite GaN epilayers grown on a 6H-SiC (0001)Si or a Si (111) substrate were measured as a function of temperature. The valence band structure of a biaxially tensile-strained (-0.15% in c axis) epilayer was drastically changed compared to that in unstrained and compressively strained ones; the optical transition between the conduction and the uppermost valence band exhibiting the minimum transition energy was polarized parallel to the c axis, which is characteristic of the spin split-off valence band in unstrained crystal.

本文言語English
ページ(範囲)2085-2087
ページ数3
ジャーナルApplied Physics Letters
70
16
DOI
出版ステータスPublished - 1997 4 21

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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