Optical study of the accumulated charge in the amorphous InGaZnO 4 thin-film transistor

Akira Kato*, Yoshiaki Uesu, Takuro Katsufuji

*この研究の対応する著者

研究成果: Article査読

抄録

Thin-film transistors (TFTs) with amorphous InGaZnO 4 as a channel layer are known to exhibit high field-effect mobility. We studied the characteristic of the accumulated carriers in this TFT by optical spectroscopy and observed Drude absorption and oscillation in the transmittance spectrum of the channel region appearing with an applied gate voltage. The scattering rate of the carriers in the accumulation layers estimated from the optical spectrum is ℏ/τAL = 0: 19 eV, and this small value is the origin of the high mobility of the TFT with amorphous InGaZnO 4.

本文言語English
論文番号093706
ジャーナルjournal of the physical society of japan
78
9
DOI
出版ステータスPublished - 2009 9月 1

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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