Optically controlled S- and N-shaped negative differential resistances by R-TOPS

H. Sakata*, K. Utaka, Y. Matsushima

*この研究の対応する著者

研究成果: Conference article査読

抄録

Two types of optoelectronic switching devices using negative differential resistance (NDR) are proposed. One is a triangular-barrier optoelectronic switch which consists of a triangular-barrier phototransistor (TBP). The other is a resonant-tunneling triangular barrier optoelectronic switch (R-TOPS) which consists of a double-barrier resonant-tunneling diode and a TBP. Optically controlled S- and N-shaped NDRs in the structure of an R-TOPS are reported.

本文言語English
ページ(範囲)524-527
ページ数4
ジャーナルConference Proceedings - International Conference on Indium Phosphide and Related Materials
出版ステータスPublished - 1995 1 1
外部発表はい
イベントProceedings of the 7th International Conference on Indium Phosphide and Related Materials - Sapporo, Jpn
継続期間: 1995 5 91995 5 13

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

フィンガープリント

「Optically controlled S- and N-shaped negative differential resistances by R-TOPS」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル