Optically controlled S- and N-shaped negative differential resistances by resonant-tunnelling triangular-barrier optoelectronic switch (R-TOPS)

H. Sakata*, K. Utaka, Y. Matsushima

*この研究の対応する著者

研究成果: Article査読

抄録

We report novel optoelectronic functions in a resonant-tunnelling triangular-barrier optoelectronic switch (R-TOPS). We successfully observed optically controlled S- and N-shaped negative differential resistances (NDRs) simultaneously in a single device. Different types of optoelectronic bistabilities originating from S- and N-shaped NDRs were obtained by changing the input light power. We also obtained the differential gain characteristics and latch characteristics from S-shaped NDR by changing the bias voltages. These characteristics with their different behaviours make it possible to realize novel optoelectronic switching.

本文言語English
ページ(範囲)591-597
ページ数7
ジャーナルOptical and Quantum Electronics
28
5
DOI
出版ステータスPublished - 1996 1 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 電子工学および電気工学

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