Optimal growth conditions of AlGaAs/GaAs quantum wells by flow-rate modulation epitaxy

Yoshiharu Yamauchi, Toshiki Makimoto, Yoshiji Horikoshi

研究成果: Article査読

9 被引用数 (Scopus)

抄録

AlGaAs/GaAs single quantum wells with narrow photoluminescence linewidths were grown at 570°C by modified metal-organic chemical vapor deposition, flow-rate modulation epitaxy, using optimal arsine flow rates. The full widths at half maximum of low-temperature photoluminescence spectra strongly depended on arsine flow rates. Under optimal conditions, their values were 8.8, 6.7, 5.0 and 4.8 meV for 1.7, 3.4, 5.1 and 6.8 nm-wide wells, respectively. The resulting narrow photoluminescence linewidths indicate that the heterointerfaces are very flat on an atomic scale, probably as a result of enhanced surface migration of Ga and Al atoms.

本文言語English
ページ(範囲)L155-L158
ジャーナルJapanese journal of applied physics
28
2 A
DOI
出版ステータスPublished - 1989 2
外部発表はい

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

フィンガープリント 「Optimal growth conditions of AlGaAs/GaAs quantum wells by flow-rate modulation epitaxy」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル