Optimal growth conditions of AlGaAs/GaAs quantum wells by flow-rate modulation epitaxy

Yoshiharu Yamauchi, Toshiki Makimoto, Yoshiji Horikoshi

研究成果: Article

8 引用 (Scopus)

抄録

AlGaAs/GaAs single quantum wells with narrow photoluminescence linewidths were grown at 570°C by a modified metal-organic chemical vapor deposition method called flow-rate modulation epitaxy, using optimal arsine flow rates. The full widths at half maximum of low-temperature photoluminescence spectra strongly depended on arsine flow rates. Under optimal conditions, their values were 8.8, 6.7, 5.0 and 4.8 meV for 1.7, 3.4, 5.1 and 6.8 nm-wide wells, respectively. The resulting narrow photoluminescence linewidths indicate that the heterointerfaces are very flat on an atomic scale, probably as a result of enhanced surface migration of Ga and Al atoms.

元の言語English
ページ(範囲)155-158
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
28
発行部数2
出版物ステータスPublished - 1989 2
外部発表Yes

Fingerprint

Epitaxial growth
epitaxy
Semiconductor quantum wells
aluminum gallium arsenides
Photoluminescence
flow velocity
Flow rate
Modulation
quantum wells
photoluminescence
modulation
Linewidth
Organic chemicals
Full width at half maximum
metalorganic chemical vapor deposition
Chemical vapor deposition
Atoms
Metals
atoms
Temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

これを引用

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T1 - Optimal growth conditions of AlGaAs/GaAs quantum wells by flow-rate modulation epitaxy

AU - Yamauchi, Yoshiharu

AU - Makimoto, Toshiki

AU - Horikoshi, Yoshiji

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N2 - AlGaAs/GaAs single quantum wells with narrow photoluminescence linewidths were grown at 570°C by a modified metal-organic chemical vapor deposition method called flow-rate modulation epitaxy, using optimal arsine flow rates. The full widths at half maximum of low-temperature photoluminescence spectra strongly depended on arsine flow rates. Under optimal conditions, their values were 8.8, 6.7, 5.0 and 4.8 meV for 1.7, 3.4, 5.1 and 6.8 nm-wide wells, respectively. The resulting narrow photoluminescence linewidths indicate that the heterointerfaces are very flat on an atomic scale, probably as a result of enhanced surface migration of Ga and Al atoms.

AB - AlGaAs/GaAs single quantum wells with narrow photoluminescence linewidths were grown at 570°C by a modified metal-organic chemical vapor deposition method called flow-rate modulation epitaxy, using optimal arsine flow rates. The full widths at half maximum of low-temperature photoluminescence spectra strongly depended on arsine flow rates. Under optimal conditions, their values were 8.8, 6.7, 5.0 and 4.8 meV for 1.7, 3.4, 5.1 and 6.8 nm-wide wells, respectively. The resulting narrow photoluminescence linewidths indicate that the heterointerfaces are very flat on an atomic scale, probably as a result of enhanced surface migration of Ga and Al atoms.

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